TY - JOUR
T1 - Highly Efficient Full van der Waals 1D p-Te/2D n-Bi2O2Se Heterodiodes with Nanoscale Ultra-Photosensitive Channels
AU - Wang, Weijun
AU - Meng, You
AU - Wang, Wei
AU - Zhang, Zhuomin
AU - Xie, Pengshan
AU - Lai, Zhengxun
AU - Bu, Xiuming
AU - Li, Yezhan
AU - Liu, Chuntai
AU - Yang, Zengbao
AU - Yip, Sen Po
AU - Ho, Johnny C.
N1 - Funding Information:
W.W.J. and M.Y. contributed equally to this work. This work was financially supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region, China (CityU RFS2021‐1S04), Shenzhen Municipality Science and Technology Innovation Commission (Grant No. SGDX2020110309300402; “Modulation and Detection of Terahertz Waves based on Semi‐Metallic Two‐Dimensional Materials,” CityU), and Foshan Innovative and Entrepreneurial Research Team Program (No. 2018IT100031).
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022
Y1 - 2022
N2 - Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2Se type-II diodes show a high rectification ratio of 3.6 × 104. Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W−1 (100 mV bias) and 768.8 mA W−1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light–matter interactions for further performance enhancement of photoelectronic devices.
AB - Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2Se type-II diodes show a high rectification ratio of 3.6 × 104. Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W−1 (100 mV bias) and 768.8 mA W−1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light–matter interactions for further performance enhancement of photoelectronic devices.
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U2 - 10.1002/adfm.202203003
DO - 10.1002/adfm.202203003
M3 - Article
AN - SCOPUS:85129377134
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
ER -