Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

K. Kasahara, Keisuke Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, M. Miyao

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Abstract

We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.

Original languageEnglish
Article number09B105
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - May 1 2010
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kasahara, K., Yamamoto, K., Yamada, S., Murakami, T., Hamaya, K., Mibu, K., & Miyao, M. (2010). Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy. Journal of Applied Physics, 107(9), [09B105]. https://doi.org/10.1063/1.3350915