Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

K. Kasahara; Keisuke Yamamoto; S. Yamada; T. Murakami; K. Hamaya; K. Mibu; M. Miyao

doi:10.1063/1.3350915

Highly ordered Co₂ FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

K. Kasahara, Keisuke Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, M. Miyao

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

We demonstrate high-quality epitaxial growth of Heusler alloy Co ₂ FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co₂ FeSi samples reported.

Original language	English
Article number	09B105
Journal	Journal of Applied Physics
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.3350915
Publication status	Published - May 1 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3350915

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title = "Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy",

abstract = "We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron M{\"o}ssbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.",

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T1 - Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

AU - Kasahara, K.

AU - Yamamoto, Keisuke

AU - Yamada, S.

AU - Murakami, T.

AU - Hamaya, K.

AU - Mibu, K.

AU - Miyao, M.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.

AB - We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.

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ER -

Highly ordered Co₂ FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

Abstract

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