Highly resolved conduction properties of ferroelectric/semiconductor diodes exhibiting memory effect

Yukio Watanabe, D. Sawamura, N. Toyama, M. Okano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Three dimensionally aligned ferroelectric/semiconductor heterostructures were epitaxially grown, and their leakage current was measured. At low applied voltage, the leakage current through the heterostructures was relaxation-dominated and symmetric with regard to bias polarity. With increasing applied voltage, it became asymmetric and exhibited a reproducible memory effect, i.e., current-induced switching between high and low resistance states. These behaviors were observed in many combinations of ferroelectrics and perovskite-semiconductors. By regarding the ferroelectric as a semiconductor, the above observations are successfully explained.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume32
Issue number4 SUPPL.
Publication statusPublished - 1998
Externally publishedYes

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semiconductor diodes
conduction
leakage
low resistance
high resistance
low voltage
polarity
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Highly resolved conduction properties of ferroelectric/semiconductor diodes exhibiting memory effect. / Watanabe, Yukio; Sawamura, D.; Toyama, N.; Okano, M.

In: Journal of the Korean Physical Society, Vol. 32, No. 4 SUPPL., 1998.

Research output: Contribution to journalArticle

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