Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application

Hiromu Kojima, Daishi Kido, Haruichi Kanaya, Hiroyuki Ishii, Tatsuro Maeda, Eiji Kume, Mutsuo Ogura, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a newly developed square law detector array whose NEP is as low as ∼ 1 pW/Hz0.5 for 1.0 THz waves. The detector array using high electron mobility transistor (HEMT) with InGaAs/InAs/InGaAs double hetero-structured channel has been fabricated. The InAs-HEMT was fabricated on a quartz substrate using the layer transfer technology. Also, an array of square law detectors was developed by applying advanced selective etching, atomic layer deposition, and metallization to the transferred hetero-structured layers. The static analysis revealed that the transistor shows electron mobility as high as 3,200 cm2/Vs and low leakage with subthreshold slope as low as ∼ 100 mV/dec. Detection performance was characterized by directly inputting 1.0 THz waves thorough a THz probe to each of the arrayed detectors. It is also demonstrated that the detection characteristics were well described by the analytical formulae derived from the channel-carrier behavior model. The experimental results suggested that the developed detector array is a promising candidate for imaging application.

Original languageEnglish
Title of host publicationTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII
EditorsLaurence P. Sadwick, Tianxin Yang
PublisherSPIE
ISBN (Electronic)9781510624764
DOIs
Publication statusPublished - Jan 1 2019
EventTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019 - San Francisco, United States
Duration: Feb 4 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10917
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII 2019
CountryUnited States
CitySan Francisco
Period2/4/192/7/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kojima, H., Kido, D., Kanaya, H., Ishii, H., Maeda, T., Kume, E., Ogura, M., & Asano, T. (2019). Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application. In L. P. Sadwick, & T. Yang (Eds.), Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII [109170Y] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10917). SPIE. https://doi.org/10.1117/12.2510794