Highly Stable 1.3-μm-Wavelength Lasers With p- and n-InP Buried Heterostructure

Tatsuya Takeshita, Tsuyoshi Ito, Mitsuru Sugo, Kazutoshi Kato

Research output: Contribution to journalArticle

Abstract

Highly stable 1.3- μ m-wavelength Fabry-Perot lasers with a p- and n-type InP buried heterostructure have been achieved at an ambient temperature of 85 °C. The t0.5deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. It is confirmed that the fabricated 1.3- μ m FP lasers have a different optical-beam-induced-current characteristic from lasers suffering from t0.5 deterioration. The first-stage degradation is due to the deterioration of the active layer and is attributed to the fact that some nonradiative recombination centers are generated in the active layer. VII. summary We have achieved highly stable 1.3-μm-wavelength FP lasers with a p- and n-type InP buried heterostructure, which operate at an ambient temperature of 85 °C. The t0.5 deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. We confirmed that the OBIC characteristic of the fabricated 1.3-μm FP lasers is different from that of lasers suffering from to.5 deterioration. The first-stage degradation results from the deterioration of the active layer, and this is attributed to the generation of some nonradiative recombination centers in the active layer. The 1.3-μm FP lasers have sufficient stability at high temperature and constitute promising light sources for local-access optical networks.

Original languageEnglish
Pages (from-to)576-581
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume8
Issue number3
DOIs
Publication statusPublished - Sep 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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