Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition

Kazunori Koga, Toshihisa Indue, Kouki Bando, Shinya Iwashita, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 × 10 15 cm -3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm 2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 after 100h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable aSi:H films.

Original languageEnglish
Pages (from-to)L1430-L1432
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number46-49
DOIs
Publication statusPublished - Nov 25 2005

Fingerprint

Chemical vapor deposition
hollow
vapor deposition
Plasmas
Defect density
defects
Amorphous silicon
upstream
luminous intensity
amorphous silicon
reactors
retarding

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition. / Koga, Kazunori; Indue, Toshihisa; Bando, Kouki; Iwashita, Shinya; Shiratani, Masaharu; Watanabe, Yukio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 46-49, 25.11.2005, p. L1430-L1432.

Research output: Contribution to journalArticle

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abstract = "Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 × 10 15 cm -3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm 2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 after 100h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable aSi:H films.",
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AU - Koga, Kazunori

AU - Indue, Toshihisa

AU - Bando, Kouki

AU - Iwashita, Shinya

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 2005/11/25

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N2 - Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 × 10 15 cm -3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm 2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 after 100h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable aSi:H films.

AB - Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 × 10 15 cm -3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm 2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 after 100h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable aSi:H films.

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