Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

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Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

Original languageEnglish
Article number142105
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
Publication statusPublished - Apr 3 2006

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condensation
insulators
irradiation
dosage
oxidation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing. / Miyao, Masanobu; Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Hagino, Hiroyasu; Ninomiya, Masaharu; Nakamae, Masahiko.

In: Applied Physics Letters, Vol. 88, No. 14, 142105, 03.04.2006.

Research output: Contribution to journalArticle

Miyao, Masanobu ; Tanaka, Masanori ; Tsunoda, Isao ; Sadoh, Taizoh ; Enokida, Toyotsugu ; Hagino, Hiroyasu ; Ninomiya, Masaharu ; Nakamae, Masahiko. / Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing. In: Applied Physics Letters. 2006 ; Vol. 88, No. 14.
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