Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

Masanobu Miyao; Masanori Tanaka; Isao Tsunoda; Taizoh Sadoh; Toyotsugu Enokida; Hiroyasu Hagino; Masaharu Ninomiya; Masahiko Nakamae

doi:10.1063/1.2192644

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H⁺ irradiation and postannealing

Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

Electronic Devices

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

Original language	English
Article number	142105
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2192644
Publication status	Published - Apr 3 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2192644

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Miyao, M., Tanaka, M., Tsunoda, I., Sadoh, T., Enokida, T., Hagino, H., Ninomiya, M., & Nakamae, M. (2006). Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H⁺ irradiation and postannealing. Applied Physics Letters, 88(14), [142105]. https://doi.org/10.1063/1.2192644

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H⁺ irradiation and postannealing. / Miyao, Masanobu; Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Hagino, Hiroyasu; Ninomiya, Masaharu; Nakamae, Masahiko.

In: Applied Physics Letters, Vol. 88, No. 14, 142105, 03.04.2006.

Research output: Contribution to journal › Article

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