Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

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21 Citations (Scopus)

Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

Original languageEnglish
Article number142105
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
Publication statusPublished - Apr 3 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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