Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

Masanobu Miyao; Masanori Tanaka; Isao Tsunoda; Taizoh Sadoh; Toyotsugu Enokida; Hiroyasu Hagino; Masaharu Ninomiya; Masahiko Nakamae

doi:10.1063/1.2192644

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H⁺ irradiation and postannealing

Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

Electronic Devices

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Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

Original language	English
Article number	142105
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2192644
Publication status	Published - Apr 3 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2192644

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title = "Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing",

abstract = "Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).",

author = "Masanobu Miyao and Masanori Tanaka and Isao Tsunoda and Taizoh Sadoh and Toyotsugu Enokida and Hiroyasu Hagino and Masaharu Ninomiya and Masahiko Nakamae",

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AU - Miyao, Masanobu

AU - Tanaka, Masanori

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

AU - Enokida, Toyotsugu

AU - Hagino, Hiroyasu

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

N1 - Funding Information: A part of this work was supported by the Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/4/3

Y1 - 2006/4/3

N2 - Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

AB - Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

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Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H⁺ irradiation and postannealing

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