Abstract
Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5× 1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).
Original language | English |
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Article number | 142105 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 14 |
DOIs | |
Publication status | Published - Apr 3 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)