Abstract
To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.
| Original language | English |
|---|---|
| Pages (from-to) | 60-68 |
| Number of pages | 9 |
| Journal | Electronics and Communications in Japan (Part II: Electronics) |
| Volume | 69 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jan 1 1986 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation. / Harada, Koosuke; Sakamoto, Hiroshi; Shoyama, Masahito.
In: Electronics and Communications in Japan (Part II: Electronics), Vol. 69, No. 7, 01.01.1986, p. 60-68.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation
AU - Harada, Koosuke
AU - Sakamoto, Hiroshi
AU - Shoyama, Masahito
PY - 1986/1/1
Y1 - 1986/1/1
N2 - To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.
AB - To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.
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UR - http://www.scopus.com/inward/citedby.url?scp=84984308410&partnerID=8YFLogxK
U2 - 10.1002/ecjb.4420690707
DO - 10.1002/ecjb.4420690707
M3 - Article
AN - SCOPUS:84984308410
VL - 69
SP - 60
EP - 68
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 7
ER -