High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation

Koosuke Harada, Hiroshi Sakamoto, Masahito Shoyama

Research output: Contribution to journalArticle

Abstract

To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.

Original languageEnglish
Pages (from-to)60-68
Number of pages9
JournalElectronics and Communications in Japan (Part II: Electronics)
Volume69
Issue number7
DOIs
Publication statusPublished - Jan 1 1986

Fingerprint

converters
transistors
saturation
Feedback
Switching frequency
Bipolar transistors
LC circuits
Equivalent circuits
Inductance
Transistors
Capacitance
bipolar transistors
Power transistors
equivalent circuits
inductance
transformers
high current
Networks (circuits)
capacitance

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation. / Harada, Koosuke; Sakamoto, Hiroshi; Shoyama, Masahito.

In: Electronics and Communications in Japan (Part II: Electronics), Vol. 69, No. 7, 01.01.1986, p. 60-68.

Research output: Contribution to journalArticle

@article{04e9c2c1477748288e9676a9cb0a82c3,
title = "High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation",
abstract = "To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.",
author = "Koosuke Harada and Hiroshi Sakamoto and Masahito Shoyama",
year = "1986",
month = "1",
day = "1",
doi = "10.1002/ecjb.4420690707",
language = "English",
volume = "69",
pages = "60--68",
journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",
issn = "8756-663X",
publisher = "Scripta Technica",
number = "7",

}

TY - JOUR

T1 - High‐speed switching of the power transistor in a DC‐DC converter with current feedback and core saturation

AU - Harada, Koosuke

AU - Sakamoto, Hiroshi

AU - Shoyama, Masahito

PY - 1986/1/1

Y1 - 1986/1/1

N2 - To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.

AB - To reduce the size and weight of a switching dc‐dc converter, it is effective to increase its switching frequency. This requires the reduction of the switching time and switching loss. This paper introduces a dc‐dc converter with a short turn‐off time and a high efficiency at a switching frequency up to the order of megahertz. This is achieved by using a bipolar transistor with current feedback and core saturation. The turn‐off mechanism was analyzed by using an equivalent circuit. The turn‐off time was found to be considerably shortened by the quick discharge of the excess carrier in the base region. This is due to the formation of an LC circuit consisting of the saturated inductance of the current feedback transformer which magnetically saturates during the turn‐off period, and the base‐emitter capacitance of the switching transistor. This phenomenon can be used widely for high‐speed and high current switchings.

UR - http://www.scopus.com/inward/record.url?scp=84984308410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84984308410&partnerID=8YFLogxK

U2 - 10.1002/ecjb.4420690707

DO - 10.1002/ecjb.4420690707

M3 - Article

AN - SCOPUS:84984308410

VL - 69

SP - 60

EP - 68

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 7

ER -