HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

Yasuhiro Okada; Takeshi Mizoguchi; Yuta Tanimoto; Hideyuki Kikuchihara; Toshiyuki Naka; Wataru Saito; Mitiko Miura-Mattausch; Hans Juergen Mattausch

doi:10.1109/TED.2018.2868284

HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

Yasuhiro Okada, Takeshi Mizoguchi, Yuta Tanimoto, Hideyuki Kikuchihara, Toshiyuki Naka, Wataru Saito, Mitiko Miura-Mattausch, Hans Juergen Mattausch

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.

Original language	English
Article number	8472902
Pages (from-to)	106-115
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2868284
Publication status	Published - Jan 2019
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2868284

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HiSIM-GaN : Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction. / Okada, Yasuhiro; Mizoguchi, Takeshi; Tanimoto, Yuta; Kikuchihara, Hideyuki; Naka, Toshiyuki; Saito, Wataru; Miura-Mattausch, Mitiko; Mattausch, Hans Juergen.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 1, 8472902, 01.2019, p. 106-115.

Research output: Contribution to journal › Article › peer-review

@article{e9f5e1ffdba84b4cba7d86b881414e2b,

title = "HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction",

abstract = "The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.",

author = "Yasuhiro Okada and Takeshi Mizoguchi and Yuta Tanimoto and Hideyuki Kikuchihara and Toshiyuki Naka and Wataru Saito and Mitiko Miura-Mattausch and Mattausch, {Hans Juergen}",

year = "2019",

month = jan,

doi = "10.1109/TED.2018.2868284",

language = "English",

volume = "66",

pages = "106--115",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - HiSIM-GaN

T2 - Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

AU - Okada, Yasuhiro

AU - Mizoguchi, Takeshi

AU - Tanimoto, Yuta

AU - Kikuchihara, Hideyuki

AU - Naka, Toshiyuki

AU - Saito, Wataru

AU - Miura-Mattausch, Mitiko

AU - Mattausch, Hans Juergen

PY - 2019/1

Y1 - 2019/1

N2 - The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.

AB - The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.

UR - http://www.scopus.com/inward/record.url?scp=85054251747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054251747&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2868284

DO - 10.1109/TED.2018.2868284

M3 - Article

AN - SCOPUS:85054251747

VL - 66

SP - 106

EP - 115

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

M1 - 8472902

ER -

HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

Abstract

All Science Journal Classification (ASJC) codes

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