Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

Hiroki Ago, Izumi Tanaka, Masaharu Tsuji, Ken Ichi Ikeda, Seigi Mizuno

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

    Original languageEnglish
    Pages (from-to)18350-18354
    Number of pages5
    JournalJournal of Physical Chemistry C
    Volume112
    Issue number47
    DOIs
    Publication statusPublished - Nov 27 2008

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Energy(all)
    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films

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