Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

Hiroki Ago; Izumi Tanaka; Masaharu Tsuji; Ken Ichi Ikeda; Seigi Mizuno

doi:10.1021/jp806003a

Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

Hiroki Ago, Izumi Tanaka, Masaharu Tsuji, Ken Ichi Ikeda, Seigi Mizuno

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al₂O₃) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

Original language	English
Pages (from-to)	18350-18354
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	47
DOIs	https://doi.org/10.1021/jp806003a
Publication status	Published - Nov 27 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp806003a

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@article{8b4a2a5bb98841f4bdaf39eb5d36f576,

title = "Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment",

abstract = "We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.",

author = "Hiroki Ago and Izumi Tanaka and Masaharu Tsuji and Ikeda, {Ken Ichi} and Seigi Mizuno",

year = "2008",

month = nov,

day = "27",

doi = "10.1021/jp806003a",

language = "English",

volume = "112",

pages = "18350--18354",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "47",

}

TY - JOUR

T1 - Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

AU - Ago, Hiroki

AU - Tanaka, Izumi

AU - Tsuji, Masaharu

AU - Ikeda, Ken Ichi

AU - Mizuno, Seigi

PY - 2008/11/27

Y1 - 2008/11/27

N2 - We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

AB - We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

UR - http://www.scopus.com/inward/record.url?scp=57549117954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57549117954&partnerID=8YFLogxK

U2 - 10.1021/jp806003a

DO - 10.1021/jp806003a

M3 - Article

AN - SCOPUS:57549117954

SN - 1932-7447

VL - 112

SP - 18350

EP - 18354

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 47

ER -

Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

Abstract

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