TY - GEN
T1 - Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique
AU - Yang, Haigui
AU - Wang, Dong
AU - Nakashima, Hiroshi
PY - 2010
Y1 - 2010
N2 - Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
AB - Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
UR - http://www.scopus.com/inward/record.url?scp=78751493040&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751493040&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2010.5667472
DO - 10.1109/ICSICT.2010.5667472
M3 - Conference contribution
AN - SCOPUS:78751493040
SN - 9781424457984
T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 905
EP - 907
BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Y2 - 1 November 2010 through 4 November 2010
ER -