Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

Yoshifumi Ikoma, K. Uchiyama, F. Watanabe, T. Motooka

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p+-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.

Original languageEnglish
Pages (from-to)751-754
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - 2002

Fingerprint

Resonant tunneling
resonant tunneling
Current voltage characteristics
Heterojunctions
Resonant tunneling diodes
electric potential
Surface morphology
Atomic force microscopy
resonant tunneling diodes
Electric potential
Substrates
atomic force microscopy
curves

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikoma, Y., Uchiyama, K., Watanabe, F., & Motooka, T. (2002). Hole resonant tunneling through SiC/Si-dot/SiC heterostructures. Materials Science Forum, 389-393(1), 751-754.

Hole resonant tunneling through SiC/Si-dot/SiC heterostructures. / Ikoma, Yoshifumi; Uchiyama, K.; Watanabe, F.; Motooka, T.

In: Materials Science Forum, Vol. 389-393, No. 1, 2002, p. 751-754.

Research output: Contribution to journalArticle

Ikoma, Y, Uchiyama, K, Watanabe, F & Motooka, T 2002, 'Hole resonant tunneling through SiC/Si-dot/SiC heterostructures', Materials Science Forum, vol. 389-393, no. 1, pp. 751-754.
Ikoma Y, Uchiyama K, Watanabe F, Motooka T. Hole resonant tunneling through SiC/Si-dot/SiC heterostructures. Materials Science Forum. 2002;389-393(1):751-754.
Ikoma, Yoshifumi ; Uchiyama, K. ; Watanabe, F. ; Motooka, T. / Hole resonant tunneling through SiC/Si-dot/SiC heterostructures. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 1. pp. 751-754.
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