Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

Y. Ikoma, K. Uchiyama, F. Watanabe, T. Motooka

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    8 Citations (Scopus)

    Abstract

    We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p+-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.

    Original languageEnglish
    Pages (from-to)751-754
    Number of pages4
    JournalMaterials Science Forum
    Volume389-393
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2002

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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