Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

Y. Ikoma, K. Uchiyama, F. Watanabe, T. Motooka

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p+-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.

Original languageEnglish
Pages (from-to)751-754
Number of pages4
JournalMaterials Science Forum
Issue number1
Publication statusPublished - Jan 1 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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