Homoepitaxial diamond chemical vapor deposition for ultra-light doping

T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011 cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015 cm-3.

Original languageEnglish
Pages (from-to)197-202
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume70
DOIs
Publication statusPublished - Nov 1 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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