Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition

M. Okamoto, R. Kosugi, Y. Tanaka, D. Takeuchi, S. Nakashima, S. Nishizawa, K. Fukuda, H. Okushi, K. Arai

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Microwave plasma chemical vapor deposition was performed aiming at low temperature homoepitaxial growth of 4H-SiC thin films. The growth rate of the deposited film depended strongly on the SiH4 flow rate, and a smooth surface could not obtained at high SiH4 flow rate. The surface morphology was also affected by the C/Si ratio. A high C/Si ratio was required to obtain smooth SiC films. Single crystalline 4H-SiC film growth has been achieved at a temperature as low as 970°C by growing under very high C/Si ratio (C/Si = 175) with a very low SiH4 flow rate (0.004sccm).

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
DOIs
Publication statusPublished - 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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