Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition

M. Okamoto, R. Kosugi, Y. Tanaka, D. Takeuchi, S. Nakashima, S. Nishizawa, K. Fukuda, H. Okushi, K. Arai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Microwave plasma chemical vapor deposition was performed aiming at low temperature homoepitaxial growth of 4H-SiC thin films. The growth rate of the deposited film depended strongly on the SiH4 flow rate, and a smooth surface could not obtained at high SiH4 flow rate. The surface morphology was also affected by the C/Si ratio. A high C/Si ratio was required to obtain smooth SiC films. Single crystalline 4H-SiC film growth has been achieved at a temperature as low as 970°C by growing under very high C/Si ratio (C/Si = 175) with a very low SiH4 flow rate (0.004sccm).

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - Dec 1 2002
Externally publishedYes

Fingerprint

Chemical vapor deposition
flow velocity
Microwaves
Flow rate
vapor deposition
Plasmas
microwaves
Thin films
thin films
Growth temperature
Film growth
Surface morphology
Crystalline materials
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Okamoto, M., Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., ... Arai, K. (2002). Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition. Materials Science Forum, 389-393(1), 299-302.

Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition. / Okamoto, M.; Kosugi, R.; Tanaka, Y.; Takeuchi, D.; Nakashima, S.; Nishizawa, S.; Fukuda, K.; Okushi, H.; Arai, K.

In: Materials Science Forum, Vol. 389-393, No. 1, 01.12.2002, p. 299-302.

Research output: Contribution to journalArticle

Okamoto, M, Kosugi, R, Tanaka, Y, Takeuchi, D, Nakashima, S, Nishizawa, S, Fukuda, K, Okushi, H & Arai, K 2002, 'Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition', Materials Science Forum, vol. 389-393, no. 1, pp. 299-302.
Okamoto M, Kosugi R, Tanaka Y, Takeuchi D, Nakashima S, Nishizawa S et al. Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition. Materials Science Forum. 2002 Dec 1;389-393(1):299-302.
Okamoto, M. ; Kosugi, R. ; Tanaka, Y. ; Takeuchi, D. ; Nakashima, S. ; Nishizawa, S. ; Fukuda, K. ; Okushi, H. ; Arai, K. / Homoepitaxial growth of 4H-SiC thin film below 1000°C by microwave plasma chemical vapor deposition. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 1. pp. 299-302.
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