Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite

Tsuyoshi Yoshitake, Takashi Nishiyama, Kunihito Nagayama

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 600°C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.

Original languageEnglish
Pages (from-to)L573-L575
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number6 A
Publication statusPublished - Jun 1 2001

Fingerprint

Diamond films
Laser ablation
Pulsed lasers
laser ablation
Diamonds
pulsed lasers
Graphite
graphite
diamonds
Pulsed laser deposition
Thin films
Oxygen
Substrates
thin films
pulsed laser deposition
oxygen
Excimer lasers
atmospheres
diamond films
excimer lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite. / Yoshitake, Tsuyoshi; Nishiyama, Takashi; Nagayama, Kunihito.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 6 A, 01.06.2001, p. L573-L575.

Research output: Contribution to journalArticle

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