Homoepitaxial growth of HVPE-GaN doped with Si

M. Iwinska, T. Sochacki, M. Amilusik, P. Kempisty, B. Lucznik, M. Fijalkowski, E. Litwin-Staszewska, J. Smalc-Koziorowska, A. Khapuridze, G. Staszczak, I. Grzegory, M. Bockowski

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Abstract

Results of growth of high structural quality gallium nitride single crystals doped with silicon are described in this paper. Dichlorosilane was used as precursor of silicon in the hydride vapor phase epitaxy method. Crystallization runs with different flows of dichlorosilane were performed and compared. One-inch free-standing HVPE-GaN crystals of high structural quality and high purity, previously grown on ammonothermal GaN substrates, were used as seeds. Structural, electrical, and optical properties of HVPE-GaN doped with silicon are presented and discussed in detail. A laser diode built on the homoepitaxially grown GaN is demonstrated.

Original languageEnglish
Pages (from-to)91-96
Number of pages6
JournalJournal of Crystal Growth
Volume456
DOIs
Publication statusPublished - Dec 15 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Iwinska, M., Sochacki, T., Amilusik, M., Kempisty, P., Lucznik, B., Fijalkowski, M., Litwin-Staszewska, E., Smalc-Koziorowska, J., Khapuridze, A., Staszczak, G., Grzegory, I., & Bockowski, M. (2016). Homoepitaxial growth of HVPE-GaN doped with Si. Journal of Crystal Growth, 456, 91-96. https://doi.org/10.1016/j.jcrysgro.2016.08.043