Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency

Jae Hyun Lee, Hyun Mi Kim, Ki Bum Kim, Ryota Kabe, Pavel Anzenbacher, Jang Joo Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We report that an organic p -dopant tri[1,2-bis(trifluoromethyl)ethane-1,2- dithiolene] [Mo(tfd)3] resulted in higher density of holes than inorganic metal oxide dopants of ReO3 or MoO3 in 1,4-bis[N-(1-naphthyl)- N′ -phenylamino]- 4,4′ -diamine even though the metal oxide dopants possess deeper work functions compared to Mo(tfd) 3. Higher charge generation efficiency results largely from the homogeneous dispersion of Mo(tfd)3 in the host. In contradistinction, the transmission electron microscopy analysis revealed a formation of metal oxide nanoclusters. This highlights the importance of homogeneous dispersion for an efficient doping.

Original languageEnglish
Article number173303
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
Publication statusPublished - Apr 25 2011

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organic semiconductors
metal oxides
diamines
nanoclusters
ethane
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency. / Lee, Jae Hyun; Kim, Hyun Mi; Kim, Ki Bum; Kabe, Ryota; Anzenbacher, Pavel; Kim, Jang Joo.

In: Applied Physics Letters, Vol. 98, No. 17, 173303, 25.04.2011.

Research output: Contribution to journalArticle

Lee, Jae Hyun ; Kim, Hyun Mi ; Kim, Ki Bum ; Kabe, Ryota ; Anzenbacher, Pavel ; Kim, Jang Joo. / Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency. In: Applied Physics Letters. 2011 ; Vol. 98, No. 17.
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