Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure

Michitaka Ohtaki, Tsutomu Tokunaga, Koichi Eguchi, Hiromichi Arai

    Research output: Contribution to conferencePaper

    17 Citations (Scopus)

    Abstract

    Thermoelectric properties of perovskite-type oxides are investigated with particular interests in their hopping carrier mobility. A series of partial substitution for metal cations in CaMnO 3 , a perovskite-type oxide showing small polaron hopping conduction, reveals that larger substituents for both Ca and Mn sites result in higher carrier mobilities. Consequently, Bi and In attain the largest ZT values for the Ca and Mn site substitutions, respectively. Increase in the hopping intersite distance is suggested as a reason of the enhanced mobilities. As a consequence, the largest substituent for the Mn site, In, gives the highest mobility, and thereby brings about the largest power factor for Ca(Mn 0.9 In 0.1 )O 3 . Also benefiting from the fairly low thermal conductivity, the In-substituted sample attains ZT = 0.16 at 900 °C.

    Original languageEnglish
    Pages224-227
    Number of pages4
    Publication statusPublished - Dec 1 1997
    EventProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger
    Duration: Aug 26 1997Aug 29 1997

    Other

    OtherProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
    CityDresden, Ger
    Period8/26/978/29/97

    Fingerprint

    Carrier mobility
    Perovskite
    Substitution reactions
    Oxides
    Thermal conductivity
    Positive ions
    Metals

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Ohtaki, M., Tokunaga, T., Eguchi, K., & Arai, H. (1997). Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure. 224-227. Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, .

    Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure. / Ohtaki, Michitaka; Tokunaga, Tsutomu; Eguchi, Koichi; Arai, Hiromichi.

    1997. 224-227 Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, .

    Research output: Contribution to conferencePaper

    Ohtaki, M, Tokunaga, T, Eguchi, K & Arai, H 1997, 'Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure' Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, 8/26/97 - 8/29/97, pp. 224-227.
    Ohtaki M, Tokunaga T, Eguchi K, Arai H. Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure. 1997. Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, .
    Ohtaki, Michitaka ; Tokunaga, Tsutomu ; Eguchi, Koichi ; Arai, Hiromichi. / Hopping carrier mobilities and thermoelectric properties of oxide materials with perovskite-related structure. Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, .4 p.
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    abstract = "Thermoelectric properties of perovskite-type oxides are investigated with particular interests in their hopping carrier mobility. A series of partial substitution for metal cations in CaMnO 3 , a perovskite-type oxide showing small polaron hopping conduction, reveals that larger substituents for both Ca and Mn sites result in higher carrier mobilities. Consequently, Bi and In attain the largest ZT values for the Ca and Mn site substitutions, respectively. Increase in the hopping intersite distance is suggested as a reason of the enhanced mobilities. As a consequence, the largest substituent for the Mn site, In, gives the highest mobility, and thereby brings about the largest power factor for Ca(Mn 0.9 In 0.1 )O 3 . Also benefiting from the fairly low thermal conductivity, the In-substituted sample attains ZT = 0.16 at 900 °C.",
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    AU - Ohtaki, Michitaka

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    AU - Arai, Hiromichi

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