Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Naoki Yoshihara; Hiroki Ago; Kenta Imamoto; Masaharu Tsuji; Tatsuya Ikuta; Koji Takahashi

doi:10.1021/jp810036t

Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Naoki Yoshihara, Hiroki Ago, Kenta Imamoto, Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi

Thermophysics and Fluid Mechanics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO₂ oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO₂/Si substrate whose surface was pretreated with CF₄ plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO₂/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.

Original language	English
Pages (from-to)	8030-8034
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	113
Issue number	19
DOIs	https://doi.org/10.1021/jp810036t
Publication status	Published - May 14 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Access to Document

10.1021/jp810036t

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AU - Yoshihara, Naoki

AU - Ago, Hiroki

AU - Imamoto, Kenta

AU - Tsuji, Masaharu

AU - Ikuta, Tatsuya

AU - Takahashi, Koji

PY - 2009/5/14

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AB - For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO2 oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO2/Si substrate whose surface was pretreated with CF4 plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO2/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.

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