Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Naoki Yoshihara, Hiroki Ago, Kenta Imamoto, Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi

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16 Citations (Scopus)

Abstract

For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO2 oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO2/Si substrate whose surface was pretreated with CF4 plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO2/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.

Original languageEnglish
Pages (from-to)8030-8034
Number of pages5
JournalJournal of Physical Chemistry C
Volume113
Issue number19
DOIs
Publication statusPublished - May 14 2009

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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