Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Naoki Yoshihara; Hiroki Ago; Kenta Imamoto; Masaharu Tsuji; Tatsuya Ikuta; Koji Takahashi

doi:10.1021/jp810036t

Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Naoki Yoshihara, Hiroki Ago, Kenta Imamoto, Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi

Thermophysics and Fluid Mechanics

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO₂ oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO₂/Si substrate whose surface was pretreated with CF₄ plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO₂/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.

Original language	English
Pages (from-to)	8030-8034
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	113
Issue number	19
DOIs	https://doi.org/10.1021/jp810036t
Publication status	Published - May 14 2009

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Cite this

Yoshihara, N., Ago, H., Imamoto, K., Tsuji, M., Ikuta, T., & Takahashi, K. (2009). Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer. Journal of Physical Chemistry C, 113(19), 8030-8034. https://doi.org/10.1021/jp810036t

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10.1021/jp810036t