Abstract
For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO2 oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO2/Si substrate whose surface was pretreated with CF4 plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO2/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.
Original language | English |
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Pages (from-to) | 8030-8034 |
Number of pages | 5 |
Journal | Journal of Physical Chemistry C |
Volume | 113 |
Issue number | 19 |
DOIs | |
Publication status | Published - May 14 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films