Horizontally-aligned single-walled carbon nanotubes on sapphire

Hiroki Ago, Naoki Ishigami, Kenta Imamoto, Tomoko Suzuki, Ken Ichi Ikeda, Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.

Original languageEnglish
Pages (from-to)6165-6169
Number of pages5
JournalJournal of nanoscience and nanotechnology
Volume8
Issue number11
DOIs
Publication statusPublished - Nov 1 2008

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Carbon Nanotubes
Aluminum Oxide
Single-walled carbon nanotubes (SWCN)
Sapphire
sapphire
carbon nanotubes
Growth
Electron Transport
Electronic equipment
Substrates
electronics
electrons
Direction compound

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Horizontally-aligned single-walled carbon nanotubes on sapphire. / Ago, Hiroki; Ishigami, Naoki; Imamoto, Kenta; Suzuki, Tomoko; Ikeda, Ken Ichi; Tsuji, Masaharu; Ikuta, Tatsuya; Takahashi, Koji.

In: Journal of nanoscience and nanotechnology, Vol. 8, No. 11, 01.11.2008, p. 6165-6169.

Research output: Contribution to journalArticle

Ago, H, Ishigami, N, Imamoto, K, Suzuki, T, Ikeda, KI, Tsuji, M, Ikuta, T & Takahashi, K 2008, 'Horizontally-aligned single-walled carbon nanotubes on sapphire', Journal of nanoscience and nanotechnology, vol. 8, no. 11, pp. 6165-6169. https://doi.org/10.1166/jnn.2008.SW01
Ago, Hiroki ; Ishigami, Naoki ; Imamoto, Kenta ; Suzuki, Tomoko ; Ikeda, Ken Ichi ; Tsuji, Masaharu ; Ikuta, Tatsuya ; Takahashi, Koji. / Horizontally-aligned single-walled carbon nanotubes on sapphire. In: Journal of nanoscience and nanotechnology. 2008 ; Vol. 8, No. 11. pp. 6165-6169.
@article{464cf6fdfb034b9abc68aeacc0f932ff,
title = "Horizontally-aligned single-walled carbon nanotubes on sapphire",
abstract = "Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call {"}atomic arrangement-programmed growth (AAP growth).{"} This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.",
author = "Hiroki Ago and Naoki Ishigami and Kenta Imamoto and Tomoko Suzuki and Ikeda, {Ken Ichi} and Masaharu Tsuji and Tatsuya Ikuta and Koji Takahashi",
year = "2008",
month = "11",
day = "1",
doi = "10.1166/jnn.2008.SW01",
language = "English",
volume = "8",
pages = "6165--6169",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "11",

}

TY - JOUR

T1 - Horizontally-aligned single-walled carbon nanotubes on sapphire

AU - Ago, Hiroki

AU - Ishigami, Naoki

AU - Imamoto, Kenta

AU - Suzuki, Tomoko

AU - Ikeda, Ken Ichi

AU - Tsuji, Masaharu

AU - Ikuta, Tatsuya

AU - Takahashi, Koji

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.

AB - Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.

UR - http://www.scopus.com/inward/record.url?scp=58149252462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149252462&partnerID=8YFLogxK

U2 - 10.1166/jnn.2008.SW01

DO - 10.1166/jnn.2008.SW01

M3 - Article

C2 - 19198359

AN - SCOPUS:58149252462

VL - 8

SP - 6165

EP - 6169

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 11

ER -