H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa; Ryuhei Torigoe; Hidefumi Matsuzaki; Daisuke Yamashita; Giichiro Uchida; Kazunori Koga; Masaharu Shiratani; Yuichi Setsuhara; Keigo Takeda; Makoto Sekine; Masaru Hori

doi:10.7567/JJAP.52.01AB01

H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

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3 Citations (Scopus)

Abstract

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H₂/N₂ plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm³. The mass density of carbon films is the key parameter to tune the etching resistance.

Original language	English
Article number	01AB01
Journal	Japanese journal of applied physics
Volume	52
Issue number	1 PART2
DOIs	https://doi.org/10.7567/JJAP.52.01AB01
Publication status	Published - Jan 1 2013

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{cd30c6f42bfb4c899c0dbd7ebc4f906e,

title = "H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition",

abstract = "Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.",

author = "Tatsuya Urakawa and Ryuhei Torigoe and Hidefumi Matsuzaki and Daisuke Yamashita and Giichiro Uchida and Kazunori Koga and Masaharu Shiratani and Yuichi Setsuhara and Keigo Takeda and Makoto Sekine and Masaru Hori",

year = "2013",

month = jan,

day = "1",

doi = "10.7567/JJAP.52.01AB01",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "1 PART2",

}

TY - JOUR

T1 - H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

AU - Urakawa, Tatsuya

AU - Torigoe, Ryuhei

AU - Matsuzaki, Hidefumi

AU - Yamashita, Daisuke

AU - Uchida, Giichiro

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Setsuhara, Yuichi

AU - Takeda, Keigo

AU - Sekine, Makoto

AU - Hori, Masaru

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

AB - Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

UR - http://www.scopus.com/inward/record.url?scp=84872848214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872848214&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.01AB01

DO - 10.7567/JJAP.52.01AB01

M3 - Article

AN - SCOPUS:84872848214

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1 PART2

M1 - 01AB01

ER -

H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Abstract

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