H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

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Abstract

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

Original languageEnglish
Article number01AB01
JournalJapanese journal of applied physics
Volume52
Issue number1 PART2
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Urakawa, T., Torigoe, R., Matsuzaki, H., Yamashita, D., Uchida, G., Koga, K., Shiratani, M., Setsuhara, Y., Takeda, K., Sekine, M., & Hori, M. (2013). H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. Japanese journal of applied physics, 52(1 PART2), [01AB01]. https://doi.org/10.7567/JJAP.52.01AB01