TY - JOUR
T1 - H+ implantation-enhanced stress relaxation in c-Si 1-xGex on SiO2 during oxidation-induced Ge condensation process
AU - Sadoh, T.
AU - Matsuura, R.
AU - Ninomiya, M.
AU - Nakamae, M.
AU - Enokida, T.
AU - Hagino, H.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by the Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture Sports, Science and Technology of Japan.
PY - 2005/2
Y1 - 2005/2
N2 - Enhancement effects of H+ implantation on stress relaxation of c-Si1-xGex layers on SiO2 during oxidation-induced Ge condensation process have been investigated. Stress relaxation of c-Si1-xGex layers during oxidation (1100 °C) was significantly improved by high-dose (>1015 cm -2) H+ implantation. However, oxidation was also enhanced by implantation. Enhanced oxidation was completely suppressed by the two-step annealing (1st: 500 °C for 30 min, 2nd: 850 °C for 60 min) before oxidation. The enhanced stress relaxation was tentatively assigned to enhanced gliding of c-Si1-xGex layers on SiO2. This newly developed combination method of H+ implantation, two-step annealing, and oxidation-induced Ge condensation will be a powerful tool to fabricate highly relaxed c-Si1-xGex buffer layers for growing strained Si layers.
AB - Enhancement effects of H+ implantation on stress relaxation of c-Si1-xGex layers on SiO2 during oxidation-induced Ge condensation process have been investigated. Stress relaxation of c-Si1-xGex layers during oxidation (1100 °C) was significantly improved by high-dose (>1015 cm -2) H+ implantation. However, oxidation was also enhanced by implantation. Enhanced oxidation was completely suppressed by the two-step annealing (1st: 500 °C for 30 min, 2nd: 850 °C for 60 min) before oxidation. The enhanced stress relaxation was tentatively assigned to enhanced gliding of c-Si1-xGex layers on SiO2. This newly developed combination method of H+ implantation, two-step annealing, and oxidation-induced Ge condensation will be a powerful tool to fabricate highly relaxed c-Si1-xGex buffer layers for growing strained Si layers.
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U2 - 10.1016/j.mssp.2004.09.043
DO - 10.1016/j.mssp.2004.09.043
M3 - Article
AN - SCOPUS:13244254054
SN - 1369-8001
VL - 8
SP - 167
EP - 170
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 1-3 SPEC. ISS.
ER -