H+ implantation-enhanced stress relaxation in c-Si 1-xGex on SiO2 during oxidation-induced Ge condensation process

T. Sadoh, R. Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

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Abstract

Enhancement effects of H+ implantation on stress relaxation of c-Si1-xGex layers on SiO2 during oxidation-induced Ge condensation process have been investigated. Stress relaxation of c-Si1-xGex layers during oxidation (1100 °C) was significantly improved by high-dose (>1015 cm -2) H+ implantation. However, oxidation was also enhanced by implantation. Enhanced oxidation was completely suppressed by the two-step annealing (1st: 500 °C for 30 min, 2nd: 850 °C for 60 min) before oxidation. The enhanced stress relaxation was tentatively assigned to enhanced gliding of c-Si1-xGex layers on SiO2. This newly developed combination method of H+ implantation, two-step annealing, and oxidation-induced Ge condensation will be a powerful tool to fabricate highly relaxed c-Si1-xGex buffer layers for growing strained Si layers.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - Feb 1 2005

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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