HVEM characterization of crack tip dislocations in silicon crystals

Masaki Tanaka, Kenji Higashida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Crack tip dislocations in silicon crystals have been studied using high voltage electron microscopy (HVEM). The dislocation images have been investigated by comparing the observed images to those that were simulated. Dislocation images were computed in the conditions g·b = 0, 1 or 2 (g: diffraction vector, b: Burgers vector). The characteristics of 60° dislocations were examined in detail since these dislocations are not characterized only by the condition g·b = 0 criterion. The computed images were in good agreement with those observed by HVEM. Residual contrasts of 60° dislocations under the condition g·b = 0 exhibited characteristic black-and-white contrasts, which can contribute to the characterization of the dislocations. Such characterization of dislocations is essential in order to clarify the dislocation mechanism which controls the fracture toughness of materials.

Original languageEnglish
Pages (from-to)353-360
Number of pages8
JournalJournal of Electron Microscopy
Volume53
Issue number4
DOIs
Publication statusPublished - Dec 17 2004

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crack tips
Silicon
Dislocations (crystals)
Crack tips
Electron microscopy
high voltages
electron microscopy
Electron Microscopy
Burgers vector
Crystals
Electric potential
silicon
crystals
Fracture toughness
Diffraction
fracture strength
hydroquinone

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

HVEM characterization of crack tip dislocations in silicon crystals. / Tanaka, Masaki; Higashida, Kenji.

In: Journal of Electron Microscopy, Vol. 53, No. 4, 17.12.2004, p. 353-360.

Research output: Contribution to journalArticle

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