HVEM characterization of crack tip dislocations in silicon crystals

Masaki Tanaka, Kenji Higashida

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    Crack tip dislocations in silicon crystals have been studied using high voltage electron microscopy (HVEM). The dislocation images have been investigated by comparing the observed images to those that were simulated. Dislocation images were computed in the conditions g·b = 0, 1 or 2 (g: diffraction vector, b: Burgers vector). The characteristics of 60° dislocations were examined in detail since these dislocations are not characterized only by the condition g·b = 0 criterion. The computed images were in good agreement with those observed by HVEM. Residual contrasts of 60° dislocations under the condition g·b = 0 exhibited characteristic black-and-white contrasts, which can contribute to the characterization of the dislocations. Such characterization of dislocations is essential in order to clarify the dislocation mechanism which controls the fracture toughness of materials.

    Original languageEnglish
    Pages (from-to)353-360
    Number of pages8
    JournalJournal of Electron Microscopy
    Issue number4
    Publication statusPublished - 2004

    All Science Journal Classification (ASJC) codes

    • Instrumentation


    Dive into the research topics of 'HVEM characterization of crack tip dislocations in silicon crystals'. Together they form a unique fingerprint.

    Cite this