HVEM observation of crack tip dislocations in silicon crystals

K. Higashida, T. Kawamura, Tatsuya Morikawa, Y. Miura, N. Narita, R. Onodera

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Dislocation configurations near the tip of a crack in Si crystals has been investigated by using a high voltage electron microscope (HVEM). A (1̄10) crack was introduced into a (001) silicon wafer by using indentation method at room temperature, and the specimen was annealed at 823 K to emit dislocations from the tip of the crack under the presence of residual stress due to the indentation. An array of dislocations was seen not only in front of the crack tip but also in the crack wake. The dislocations were emitted on the (11̄1) plane which is oblique to the (1̄10) crack. The effect of crack tip shielding due to the dislocations is analyzed to be mainly mode I. Dense dislocation region is also found near the tip, suggesting the occurrence of dislocation multiplication around the crack tip.

Original languageEnglish
Pages (from-to)683-686
Number of pages4
JournalMaterials Science and Engineering A
Volume319-321
DOIs
Publication statusPublished - Dec 1 2001

Fingerprint

crack tips
Silicon
Dislocations (crystals)
Crack tips
high voltages
Electron microscopes
electron microscopes
Cracks
Crystals
cracks
Electric potential
silicon
crystals
Indentation
indentation
Silicon wafers
Shielding
Residual stresses
multiplication
wakes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

HVEM observation of crack tip dislocations in silicon crystals. / Higashida, K.; Kawamura, T.; Morikawa, Tatsuya; Miura, Y.; Narita, N.; Onodera, R.

In: Materials Science and Engineering A, Vol. 319-321, 01.12.2001, p. 683-686.

Research output: Contribution to journalArticle

Higashida, K. ; Kawamura, T. ; Morikawa, Tatsuya ; Miura, Y. ; Narita, N. ; Onodera, R. / HVEM observation of crack tip dislocations in silicon crystals. In: Materials Science and Engineering A. 2001 ; Vol. 319-321. pp. 683-686.
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