HVEM study of crack tip dislocations in silicon crystals

Kenji Higashida, Masaki Tanaka, Ryuta Onodera

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The present paper describes the nature of crack tip plasticity in silicon crystals examined by high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Firstly, AFM images around a crack tip are presented, where the formation of fine slip bands with the step heights of one or two nanometers is demonstrated. Secondly, crack-tip dislocations observed by HVEM are exhibited, where it is emphasized that dislocation characterization is essential to consider the relief mechanism of crack-tip stress concentration.

Original languageEnglish
Pages (from-to)4043-4046
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberV
Publication statusPublished - 2005

Fingerprint

crack tips
Silicon
Dislocations (crystals)
Crack tips
Electron microscopy
high voltages
electron microscopy
Crystals
Electric potential
silicon
crystals
Atomic force microscopy
atomic force microscopy
stress concentration
edge dislocations
plastic properties
Plasticity
Stress concentration

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Higashida, K., Tanaka, M., & Onodera, R. (2005). HVEM study of crack tip dislocations in silicon crystals. Materials Science Forum, 475-479(V), 4043-4046.

HVEM study of crack tip dislocations in silicon crystals. / Higashida, Kenji; Tanaka, Masaki; Onodera, Ryuta.

In: Materials Science Forum, Vol. 475-479, No. V, 2005, p. 4043-4046.

Research output: Contribution to journalArticle

Higashida, K, Tanaka, M & Onodera, R 2005, 'HVEM study of crack tip dislocations in silicon crystals', Materials Science Forum, vol. 475-479, no. V, pp. 4043-4046.
Higashida, Kenji ; Tanaka, Masaki ; Onodera, Ryuta. / HVEM study of crack tip dislocations in silicon crystals. In: Materials Science Forum. 2005 ; Vol. 475-479, No. V. pp. 4043-4046.
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