HVEM/AFM observation of hinge-type plastic zones associated with cracks in silicon crystals

Masaki Tanaka, Kenji Higashida, Tatsuya Kishikawa, Tatsuya Morikawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Dislocation structures developed in hinge-type plastic zones associated with cracks in silicon crystals have been studied using a high voltage electron microscope (HVEM). Fine slip bands due to those dislocations have been also examined by an atomic force microscope (AFM). {100} and {110} cracks were introduced into {110} silicon wafers at room temperature by Vickers indentation method. The temperature of the wafer chips indented was raised to higher than 823 K to activate dislocations around crack tips under a residual stress due to the indentation. In specimens with the heat-treatment, prominent dislocation arrays corresponding to the hinge-type plastic zone were observed not only near the crack tip but also in the crack wake. AFM observations showed that very fine slip bands with the step height of a few nano-meters were formed with the regular spacing of a few microns. Based on the analyses of those dislocations and slip bands, it has been revealed that those dislocations were shielding-type increasing the fracture toughness.

Original languageEnglish
Pages (from-to)2169-2172
Number of pages4
JournalMaterials Transactions
Volume43
Issue number9
DOIs
Publication statusPublished - Sep 2002

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hinges
Silicon
Hinges
high voltages
Microscopes
Electron microscopes
plastics
cracks
electron microscopes
microscopes
Plastics
Cracks
Indentation
Crack tips
Crystals
edge dislocations
Electric potential
silicon
crystals
crack tips

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

HVEM/AFM observation of hinge-type plastic zones associated with cracks in silicon crystals. / Tanaka, Masaki; Higashida, Kenji; Kishikawa, Tatsuya; Morikawa, Tatsuya.

In: Materials Transactions, Vol. 43, No. 9, 09.2002, p. 2169-2172.

Research output: Contribution to journalArticle

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