HVEM/AFM observation of hinge-type plastic zones associated with cracks in silicon crystals

Masaki Tanaka, Kenji Higashida, Tatsuya Kishikawa, Tatsuya Morikawa

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    14 Citations (Scopus)

    Abstract

    Dislocation structures developed in hinge-type plastic zones associated with cracks in silicon crystals have been studied using a high voltage electron microscope (HVEM). Fine slip bands due to those dislocations have been also examined by an atomic force microscope (AFM). {100} and {110} cracks were introduced into {110} silicon wafers at room temperature by Vickers indentation method. The temperature of the wafer chips indented was raised to higher than 823 K to activate dislocations around crack tips under a residual stress due to the indentation. In specimens with the heat-treatment, prominent dislocation arrays corresponding to the hinge-type plastic zone were observed not only near the crack tip but also in the crack wake. AFM observations showed that very fine slip bands with the step height of a few nano-meters were formed with the regular spacing of a few microns. Based on the analyses of those dislocations and slip bands, it has been revealed that those dislocations were shielding-type increasing the fracture toughness.

    Original languageEnglish
    Pages (from-to)2169-2172
    Number of pages4
    JournalMaterials Transactions
    Volume43
    Issue number9
    DOIs
    Publication statusPublished - Sep 2002

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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