TY - GEN
T1 - Hybrid-formation of Ge-on-insulator structures on Si platform by SiGe-mixing-triggered rapid-melting growth - A road to artificial crystal
AU - Miyao, M.
AU - Kurosawa, M.
AU - Toko, K.
AU - Tojo, Y.
AU - Sadoh, T.
N1 - Funding Information:
The work of authors at the Optical Sciences Center was supported under NASA grants NAGW-896 and NAG5-859.
PY - 2013
Y1 - 2013
N2 - Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves chip-size (∼cm length) GOI structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth over insulating films is clarified as the solidification temperature gradient originating from melting-induced Si-Ge mixing. Combination with the artificial Si micro-seed techniques and the rapid melting growth enables the formation of hybrid-orientation GOI arrays, i.e., (100), (110), and (111) stripes, on (100) Si platform. High hole mobility (∼1000 cm2/Vs) in hybrid-orientation GOI is also demonstrated.
AB - Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves chip-size (∼cm length) GOI structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth over insulating films is clarified as the solidification temperature gradient originating from melting-induced Si-Ge mixing. Combination with the artificial Si micro-seed techniques and the rapid melting growth enables the formation of hybrid-orientation GOI arrays, i.e., (100), (110), and (111) stripes, on (100) Si platform. High hole mobility (∼1000 cm2/Vs) in hybrid-orientation GOI is also demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84885738385&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885738385&partnerID=8YFLogxK
U2 - 10.1149/05005.0059ecst
DO - 10.1149/05005.0059ecst
M3 - Conference contribution
AN - SCOPUS:84885738385
SN - 9781607683537
T3 - ECS Transactions
SP - 59
EP - 70
BT - High Purity Silicon 12
PB - Electrochemical Society Inc.
T2 - 12th High Purity Silicon Symposium - 222nd ECS Meeting
Y2 - 7 October 2012 through 11 October 2012
ER -