Hybrid-formation of Ge-on-insulator structures on Si platform by SiGe-mixing-triggered rapid-melting growth - A road to artificial crystal

M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves chip-size (∼cm length) GOI structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth over insulating films is clarified as the solidification temperature gradient originating from melting-induced Si-Ge mixing. Combination with the artificial Si micro-seed techniques and the rapid melting growth enables the formation of hybrid-orientation GOI arrays, i.e., (100), (110), and (111) stripes, on (100) Si platform. High hole mobility (∼1000 cm2/Vs) in hybrid-orientation GOI is also demonstrated.

Original languageEnglish
Title of host publicationHigh Purity Silicon 12
Pages59-70
Number of pages12
Volume50
Edition5
DOIs
Publication statusPublished - Dec 1 2012
Event12th High Purity Silicon Symposium - 222nd ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 11 2012

Other

Other12th High Purity Silicon Symposium - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/11/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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