TY - JOUR
T1 - Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth
AU - Kurosawa, Masashi
AU - Kawabata, Naoyuki
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sport, Science, and Technology in Japan and Semiconductor Technology Academic Research Center (STARC). M.K. wishes to thank JSPS research program for young scientists. The authors wish to thank Professor T. Asano and Dr. G. Nakagawa of Kyushu University for providing the use of the EBSD measurement system. Stimulating discussions by Dr. I. Mizushima, Dr. N. Tamura, and Dr. M. Yoshimaru of STARC and Dr. K. Toko and Dr. H. Yokoyama of Kyushu University are greatly appreciated.
PY - 2012/4/23
Y1 - 2012/4/23
N2 - Hybrid-integration of (111), (110), and (100) Ge-on-insulator (GOI) on an Si chip is essential to merge III-V semiconductor optical-devices as well as high-speed Ge transistors onto Si-large-scale integrated-circuits. We clarify important-parameters to control Ni-metal-induced lateral crystallization and Al-induced layer-exchange crystallization. This achieves artificial (110) and (111) Si micro-seed on insulating-film. Together with Si substrate as (100) Si seed, multi-crystal-seeds with different orientations are aligned on a Si chip. Then, SiGe-mixing triggered rapid-melting-growth of amorphous-Ge is examined from these multi-crystal-seeds. This enables simultaneous Ge lateral-crystallization with (111), (110), and (100) orientations. High-quality, hybrid-orientation GOIs without defects are demonstrated on Si platform.
AB - Hybrid-integration of (111), (110), and (100) Ge-on-insulator (GOI) on an Si chip is essential to merge III-V semiconductor optical-devices as well as high-speed Ge transistors onto Si-large-scale integrated-circuits. We clarify important-parameters to control Ni-metal-induced lateral crystallization and Al-induced layer-exchange crystallization. This achieves artificial (110) and (111) Si micro-seed on insulating-film. Together with Si substrate as (100) Si seed, multi-crystal-seeds with different orientations are aligned on a Si chip. Then, SiGe-mixing triggered rapid-melting-growth of amorphous-Ge is examined from these multi-crystal-seeds. This enables simultaneous Ge lateral-crystallization with (111), (110), and (100) orientations. High-quality, hybrid-orientation GOIs without defects are demonstrated on Si platform.
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U2 - 10.1063/1.4705733
DO - 10.1063/1.4705733
M3 - Article
AN - SCOPUS:84860337628
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 17
M1 - 172107
ER -