Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Hybrid-integration of (111), (110), and (100) Ge-on-insulator (GOI) on an Si chip is essential to merge III-V semiconductor optical-devices as well as high-speed Ge transistors onto Si-large-scale integrated-circuits. We clarify important-parameters to control Ni-metal-induced lateral crystallization and Al-induced layer-exchange crystallization. This achieves artificial (110) and (111) Si micro-seed on insulating-film. Together with Si substrate as (100) Si seed, multi-crystal-seeds with different orientations are aligned on a Si chip. Then, SiGe-mixing triggered rapid-melting-growth of amorphous-Ge is examined from these multi-crystal-seeds. This enables simultaneous Ge lateral-crystallization with (111), (110), and (100) orientations. High-quality, hybrid-orientation GOIs without defects are demonstrated on Si platform.

Original languageEnglish
Article number172107
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
Publication statusPublished - Apr 23 2012

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seeds
platforms
melting
insulators
crystallization
chips
crystals
integrated circuits
transistors
high speed
defects
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth. / Kurosawa, Masashi; Kawabata, Naoyuki; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 100, No. 17, 172107, 23.04.2012.

Research output: Contribution to journalArticle

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