Hydride vapor phase epitaxy of AlN: Thermodynamic analysis of aluminum source and its application to growth

Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Y. Kangawa, A. Koukitu

Research output: Contribution to journalConference articlepeer-review

69 Citations (Scopus)

Abstract

A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (Al) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 °C and is AlCl3 when the temperature is below 790 °C. Since AlCl 3 is less reactive with quartz (SiO2) than AlCl, HVPE of AlN is possible using AlCl3 and NH3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported.

Original languageEnglish
Pages (from-to)2498-2501
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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