Abstract
We investigate hydrogen adsorption effects on stabilities and electronic properties of nitrogen defects in graphene using first-principles electronic-structure calculations within the density-functional theory. We find that the adsorption of hydrogen atoms on the pyridine-type nitrogen defects in graphene becomes energetically favorable, whereas in the case of the substitutional nitrogen defect the hydrogen adsorption becomes unfavorable. We also find that a transition from p-type to n-type doping properties occurs by hydrogen adsorption on the pyridine-type defects, suggesting that even the carrier type is controllable in nitrogen-doped graphene.
Original language | English |
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Article number | 153701 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 15 |
DOIs | |
Publication status | Published - Apr 21 2014 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)