Hydrogen incorporation in tungsten deposits growing by deuterium plasma sputtering

Kazunari Katayama, Sanshiro Kasahara, Shinichiro Ishikawa, Satoshi Fukada, Masabumi Nishikawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Tungsten deposits were produced by sputtering method using hydrogen isotope RF plasma, and the density and the incorporated components in the deposits were investigated. The density changed in the range from 14.2 g/cm3 to 6.1 g/cm3, and hydrogen isotope retention changed in the range from 0.25 to 0.05 as (H + D)/W by the difference of deposition conditions. Both the density and hydrogen isotope retention tended to decrease with an increase of pressure. Even though a deuterium gas was used for producing tungsten deposits, not only deuterium but also hydrogen, oxygen and water vapor were incorporated in the deposits. It is considered that the incorporation of these components originated in water vapor unintentionally existing in the vacuum chamber.

Original languageEnglish
Pages (from-to)1702-1705
Number of pages4
JournalFusion Engineering and Design
Volume86
Issue number9-11
DOIs
Publication statusPublished - Oct 1 2011

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Tungsten deposits
Deuterium
Sputtering
Hydrogen
Isotopes
Plasmas
Steam
Water vapor
Gases
Vacuum
Oxygen

All Science Journal Classification (ASJC) codes

  • Civil and Structural Engineering
  • Nuclear Energy and Engineering
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Hydrogen incorporation in tungsten deposits growing by deuterium plasma sputtering. / Katayama, Kazunari; Kasahara, Sanshiro; Ishikawa, Shinichiro; Fukada, Satoshi; Nishikawa, Masabumi.

In: Fusion Engineering and Design, Vol. 86, No. 9-11, 01.10.2011, p. 1702-1705.

Research output: Contribution to journalArticle

Katayama, Kazunari ; Kasahara, Sanshiro ; Ishikawa, Shinichiro ; Fukada, Satoshi ; Nishikawa, Masabumi. / Hydrogen incorporation in tungsten deposits growing by deuterium plasma sputtering. In: Fusion Engineering and Design. 2011 ; Vol. 86, No. 9-11. pp. 1702-1705.
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