Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

Original languageEnglish
Article number033503
JournalApplied Physics Letters
Volume109
Issue number3
DOIs
Publication statusPublished - Jul 18 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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