Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD∗)

Kazuma tanaka, Hisayuki Hara, Shota Nagaishi, Liu Shi, Daisuke Yamashita, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticlepeer-review

Abstract

Light-induced degradation is an important problem concerning hydrogenated amorphous silicon (a-Si:H)solar cells. A-Si:H films of lower Si-H2 bond density exhibit less light-induced degradation. In this study, Raman spectroscopy measurements of a-Si:H films with P-layer/I-layer structure reveal that high-density Si-H2 bonds exist in the I-layer within 60 nm of the P/I interface. These Si-H2 bonds originate from surface reactions of SiH3 radicals, as the alternative origin (i.e., cluster incorporation) is considerably suppressed by a multi-hollow discharge plasma chemical vapor deposition method. For an I-layer thickness of 20 nm, the density ratio of Si-H2 and Si-H bonds in the I-layer decreases from 0.133 to 0.053 as the substrate temperature increases from 170◦C to 250◦C. Fine tuning of the substrate temperature during the initial stage of I-layer deposition is thus effective in suppressing Si-H2 bond formation at the P/I interface.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPlasma and Fusion Research
Volume14
Issue numberSpecialIssue 1
DOIs
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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