Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Jonas Schön, Amanda Youssef, Sungeun Park, Laura E. Mundt, Tim Niewelt, Sebastian Mack, Kazuo Nakajima, Kohei Morishita, Ryota Murai, Mallory A. Jensen, Tonio Buonassisi, Martin C. Schubert

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Identification of the lifetime limiting defects in silicon plays a key role in systematically optimizing the efficiency potential of material for solar cells. We present a technique based on temperature and injection dependent photoluminescence imaging to determine the energy levels and capture cross section ratios of Shockley-Read-Hall defects. This allows us to identify homogeneously and inhomogeneously distributed defects limiting the charge carrier lifetime in any silicon wafer. The technique is demonstrated on an n-type wafer grown with the non-contact crucible (NOC) method and an industrial Czochralski (Cz) wafer prone to defect formation during high temperature processing. We find that the energy levels for the circular distributed defects in the Cz wafer are in good agreement with literature data for homogeneously grown oxide precipitates. In contrast, the circular distributed defects found in NOC Si have significantly deeper trap levels, despite their similar appearance.

Original languageEnglish
Article number105703
JournalJournal of Applied Physics
Volume120
Issue number10
DOIs
Publication statusPublished - Sep 14 2016
Externally publishedYes

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injection
photoluminescence
life (durability)
defects
wafers
crucibles
temperature
energy levels
silicon
carrier lifetime
absorption cross sections
charge carriers
precipitates
solar cells
traps
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Schön, J., Youssef, A., Park, S., Mundt, L. E., Niewelt, T., Mack, S., ... Schubert, M. C. (2016). Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging. Journal of Applied Physics, 120(10), [105703]. https://doi.org/10.1063/1.4961465

Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging. / Schön, Jonas; Youssef, Amanda; Park, Sungeun; Mundt, Laura E.; Niewelt, Tim; Mack, Sebastian; Nakajima, Kazuo; Morishita, Kohei; Murai, Ryota; Jensen, Mallory A.; Buonassisi, Tonio; Schubert, Martin C.

In: Journal of Applied Physics, Vol. 120, No. 10, 105703, 14.09.2016.

Research output: Contribution to journalArticle

Schön, J, Youssef, A, Park, S, Mundt, LE, Niewelt, T, Mack, S, Nakajima, K, Morishita, K, Murai, R, Jensen, MA, Buonassisi, T & Schubert, MC 2016, 'Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging', Journal of Applied Physics, vol. 120, no. 10, 105703. https://doi.org/10.1063/1.4961465
Schön, Jonas ; Youssef, Amanda ; Park, Sungeun ; Mundt, Laura E. ; Niewelt, Tim ; Mack, Sebastian ; Nakajima, Kazuo ; Morishita, Kohei ; Murai, Ryota ; Jensen, Mallory A. ; Buonassisi, Tonio ; Schubert, Martin C. / Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging. In: Journal of Applied Physics. 2016 ; Vol. 120, No. 10.
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