Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

Takao Ishii, Masashi Mukaida, Takaharu Nishihara, Shigeki Hayashi, Makoto Shinohara

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.

Original languageEnglish
Pages (from-to)L672-L674
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number6 A
DOIs
Publication statusPublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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