Identifying the Collective Length in VO2 Metal–Insulator Transitions

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In a study, VO2 heterostructures were epitaxially grown on the TiO 2. Both VO2 and TiO2 had the tetragonal structure with the small lattice mismatch plane and the VO2 thin film with an atomically flat surface could grow up to around 15 nm thickness without lattice relaxation on the TiO2 substrate. The metal–insulator transition in VO 2 occurred between the insulating phase at low temperature and the metallic phase at high temperature.

Original languageEnglish
Article number1603113
JournalSmall
Volume13
Issue number12
DOIs
Publication statusPublished - Mar 28 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Identifying the Collective Length in VO<sub>2</sub> Metal–Insulator Transitions'. Together they form a unique fingerprint.

Cite this