Abstract
In a study, VO2 heterostructures were epitaxially grown on the TiO 2. Both VO2 and TiO2 had the tetragonal structure with the small lattice mismatch plane and the VO2 thin film with an atomically flat surface could grow up to around 15 nm thickness without lattice relaxation on the TiO2 substrate. The metal–insulator transition in VO 2 occurred between the insulating phase at low temperature and the metallic phase at high temperature.
Original language | English |
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Article number | 1603113 |
Journal | Small |
Volume | 13 |
Issue number | 12 |
DOIs | |
Publication status | Published - Mar 28 2017 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Biotechnology
- Biomaterials
- Chemistry(all)
- Materials Science(all)