Imagings of picosecond-photoexcited carriers and enhanced auger recombination rate by transient reflecting grating measurements

Takayuki Tanaka, Akira Harata, Tsuguo Sawada

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Photoinduced dynamic processes at a silicon surface were investigated by time-resolved measurements of a transient reflecting grating with 532 nm excitation and detection. The signal caused by photoexcited carriers was separated from signals due to thermal and acoustic effects. The carrier signal was found to be more sensitive to ion induced damages than the thermal and acoustic effect signal. Use of the carrier signal provided an in-plane distribution image of near surface damage induced by helium ion implantation (energy, 200 keV; dose. 1015 atoms/cm2). The cause of the contrast formation was found to be the change of Auger recombination rate γ3. The obtained γ3 for intrinsic silicon was 4.0 × 10-29 cm6/s which was two orders of magnitude larger than the bulk value. The results indicated defects near the surface region (∼ 100 nm) accelerated γ3.

Original languageEnglish
Pages (from-to)3642-3647
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number6 SUPPL. A
Publication statusPublished - Jun 1 1996
Externally publishedYes

Fingerprint

gratings
Imaging techniques
Acoustics
Silicon
temperature effects
Time measurement
Ion implantation
Helium
damage
acoustics
helium ions
silicon
Atoms
Defects
Ions
ion implantation
time measurement
dosage
causes
defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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