Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	315-316
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2018.d-8-06
Publication status	Published - Sept 13 2018
Event	2018 International Conference on Solid State Devices and Materials (SSDM2018) - University of Tokyo, Tokyo, Japan Duration: Sept 9 2018 → Sept 13 2018

Conference	2018 International Conference on Solid State Devices and Materials (SSDM2018)
Country/Territory	Japan
City	Tokyo
Period	9/9/18 → 9/13/18

Access to Document

2018. 315-316 Paper presented at 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, Japan.

Research output: Contribution to conference › Paper › peer-review

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title = "Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application",

author = "K. Yamamoto and D. Wang and H. Nakashima and S. Hishiki and K. Kawamura",

year = "2018",

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day = "13",

doi = "10.7567/ssdm.2018.d-8-06",

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note = "2018 International Conference on Solid State Devices and Materials (SSDM2018) ; Conference date: 09-09-2018 Through 13-09-2018",

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T1 - Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

AU - Hishiki, S.

AU - Kawamura, K.

PY - 2018/9/13

Y1 - 2018/9/13

U2 - 10.7567/ssdm.2018.d-8-06

DO - 10.7567/ssdm.2018.d-8-06

M3 - Paper

SP - 315

EP - 316

T2 - 2018 International Conference on Solid State Devices and Materials (SSDM2018)

Y2 - 9 September 2018 through 13 September 2018

ER -