TY - JOUR
T1 - Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors
AU - Tanaka, Takahisa
AU - Yajima, Takeaki
AU - Uchida, Ken
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020
Y1 - 2020
N2 - For highly sensitive and selective sensors, numerical study of transistors functionalized with a defected self-assembled monolayer (SAM) was performed. Adsorption of water molecules on the defected SAM was treated by molecular dynamics (MD) calculations. Based on time dependent atomic positions and charges derived from the MD calculations, carrier concentration and threshold voltage of defected-SAM-functionalized transistors were derived from the Poisson equation. The defects of the SAM caused a penetration of water molecules. Due to a strong polarization of water molecules, the water molecules penetrating the defects were stacked in the same direction. The alignment of the water molecules in the defects generated a large electrical dipole, and the threshold voltage of the transistors were shifted.
AB - For highly sensitive and selective sensors, numerical study of transistors functionalized with a defected self-assembled monolayer (SAM) was performed. Adsorption of water molecules on the defected SAM was treated by molecular dynamics (MD) calculations. Based on time dependent atomic positions and charges derived from the MD calculations, carrier concentration and threshold voltage of defected-SAM-functionalized transistors were derived from the Poisson equation. The defects of the SAM caused a penetration of water molecules. Due to a strong polarization of water molecules, the water molecules penetrating the defects were stacked in the same direction. The alignment of the water molecules in the defects generated a large electrical dipole, and the threshold voltage of the transistors were shifted.
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U2 - 10.35848/1347-4065/ab80dc
DO - 10.35848/1347-4065/ab80dc
M3 - Article
AN - SCOPUS:85085268615
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SI
M1 - SIIE04
ER -