Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets

Shin Ichiro Abe, Tatsuhiko Sato, Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Wang Liao, Kojiro Ito, Masanori Hashimoto, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations on 65-nm technology bulk static random access memories. The onset energy of the SEUs induced by H ions depends on the shielding capability, i.e., the material and thickness, of components placed in front of transistors when those components do not contain hydrogen atoms. The shielding capability also influences the initial slope observed in the energy-dependence of SEU cross sections. Taking into account the non-hydrided component attached to memory cells used in the simulation, all experimental data measured at each neutron facility were reproduced well using SEU cross sections obtained by simulation. We also find that the effect of components near transistors on neutron-induced soft error rates is not negligible even for irradiation by white neutrons.

Original languageEnglish
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
Publication statusPublished - Apr 2020
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: Apr 28 2020May 30 2020

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period4/28/205/30/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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