TY - GEN
T1 - Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets
AU - Abe, Shin Ichiro
AU - Sato, Tatsuhiko
AU - Kuroda, Junya
AU - Manabe, Seiya
AU - Watanabe, Yukinobu
AU - Liao, Wang
AU - Ito, Kojiro
AU - Hashimoto, Masanori
AU - Harada, Masahide
AU - Oikawa, Kenichi
AU - Miyake, Yasuhiro
N1 - Funding Information:
In this study, we derived SEU cross sections for 65-nm bulk SRAMs by Monte Carlo simulation, for various test board structures. We also analyzed our previous experimental This work was supported by the Program on JST-OPERA Program Grant Number JPMJOP1721, Japan.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations on 65-nm technology bulk static random access memories. The onset energy of the SEUs induced by H ions depends on the shielding capability, i.e., the material and thickness, of components placed in front of transistors when those components do not contain hydrogen atoms. The shielding capability also influences the initial slope observed in the energy-dependence of SEU cross sections. Taking into account the non-hydrided component attached to memory cells used in the simulation, all experimental data measured at each neutron facility were reproduced well using SEU cross sections obtained by simulation. We also find that the effect of components near transistors on neutron-induced soft error rates is not negligible even for irradiation by white neutrons.
AB - The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations on 65-nm technology bulk static random access memories. The onset energy of the SEUs induced by H ions depends on the shielding capability, i.e., the material and thickness, of components placed in front of transistors when those components do not contain hydrogen atoms. The shielding capability also influences the initial slope observed in the energy-dependence of SEU cross sections. Taking into account the non-hydrided component attached to memory cells used in the simulation, all experimental data measured at each neutron facility were reproduced well using SEU cross sections obtained by simulation. We also find that the effect of components near transistors on neutron-induced soft error rates is not negligible even for irradiation by white neutrons.
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U2 - 10.1109/IRPS45951.2020.9128951
DO - 10.1109/IRPS45951.2020.9128951
M3 - Conference contribution
AN - SCOPUS:85088361005
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -