Impact of light-element impurities on crystalline defect generation in silicon wafer

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In multi-crystalline silicon grown by unidirectional solidification, there are many origins of crystalline defects. In this study, we investigated the effect of light-element impurities on the generation of crystalline imperfections during crystal growth. In order to control the interfusion of impurities, we regulate the Ar gas flow in the atmosphere on the basis of a computer simulation. The etch pit densities in the sample fabricated without and with Ar gas flow control in the atmosphere were 1.5 × 10 5-7.0 × 10 7 and 5.0 × 10 3-4.0 × 10 5 cm -2, respectively. In the sample fabricated without Ar gas flow control, the precipitates consisting of light-elements were observed in the region where the etch pit density markedly increased. In the region with the highest etch pit density, there were small-angle grain boundaries consisting of dislocations. We believed that the precipitates consisting of light-element impurities were the potential origins of small-angle grain boundaries. The light-element impurities should affect the crystalline defect generation induced during crystal growth, and thereby should be controlled.

Original languageEnglish
Article number02BP08
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - Feb 1 2012

Fingerprint

light elements
Silicon wafers
wafers
Impurities
Crystalline materials
gas flow
Flow of gases
impurities
Defects
defects
silicon
Crystal growth
Flow control
crystal growth
Precipitates
precipitates
Grain boundaries
grain boundaries
atmospheres
Dislocations (crystals)

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tachibana, T., Sameshima, T., Kojima, T., Arafune, K., Kakimoto, K., Miyamura, Y., ... Ogura, A. (2012). Impact of light-element impurities on crystalline defect generation in silicon wafer. Japanese journal of applied physics, 51(2 PART 2), [02BP08]. https://doi.org/10.1143/JJAP.51.02BP08

Impact of light-element impurities on crystalline defect generation in silicon wafer. / Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi.

In: Japanese journal of applied physics, Vol. 51, No. 2 PART 2, 02BP08, 01.02.2012.

Research output: Contribution to journalArticle

Tachibana, T, Sameshima, T, Kojima, T, Arafune, K, Kakimoto, K, Miyamura, Y, Harada, H, Sekiguchi, T, Ohshita, Y & Ogura, A 2012, 'Impact of light-element impurities on crystalline defect generation in silicon wafer', Japanese journal of applied physics, vol. 51, no. 2 PART 2, 02BP08. https://doi.org/10.1143/JJAP.51.02BP08
Tachibana, Tomihisa ; Sameshima, Takashi ; Kojima, Takuto ; Arafune, Koji ; Kakimoto, Koichi ; Miyamura, Yoshiji ; Harada, Hirofumi ; Sekiguchi, Takashi ; Ohshita, Yoshio ; Ogura, Atsushi. / Impact of light-element impurities on crystalline defect generation in silicon wafer. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 2 PART 2.
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