Impact of low-energy ions on plasma deposition of cubic boron nitride

Kungen Teii, Seiichiro Matsumoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalThin Solid Films
Volume576
DOIs
Publication statusPublished - Feb 2 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Impact of low-energy ions on plasma deposition of cubic boron nitride'. Together they form a unique fingerprint.

  • Cite this