Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires

Gang Meng, Takeshi Yanagida, Kazuki Nagashima, Hideto Yoshida, Masaki Kanai, Annop Klamchuen, Fuwei Zhuge, Yong He, Sakon Rahong, Xiaodong Fang, Seiji Takeda, Tomoji Kawai

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10-4 Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.

Original languageEnglish
Pages (from-to)7033-7038
Number of pages6
JournalJournal of the American Chemical Society
Volume135
Issue number18
DOIs
Publication statusPublished - May 8 2013
Externally publishedYes

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Nanowires
Electric Conductivity
Indium
Tin oxides
Nucleation
Vapors
Liquids
Tin
Gold
Vapor Pressure
Catalysts
Vapor pressure
Oxide films
indium tin oxide
Crystalline materials
Equipment and Supplies
Growth
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires. / Meng, Gang; Yanagida, Takeshi; Nagashima, Kazuki; Yoshida, Hideto; Kanai, Masaki; Klamchuen, Annop; Zhuge, Fuwei; He, Yong; Rahong, Sakon; Fang, Xiaodong; Takeda, Seiji; Kawai, Tomoji.

In: Journal of the American Chemical Society, Vol. 135, No. 18, 08.05.2013, p. 7033-7038.

Research output: Contribution to journalArticle

Meng, G, Yanagida, T, Nagashima, K, Yoshida, H, Kanai, M, Klamchuen, A, Zhuge, F, He, Y, Rahong, S, Fang, X, Takeda, S & Kawai, T 2013, 'Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires', Journal of the American Chemical Society, vol. 135, no. 18, pp. 7033-7038. https://doi.org/10.1021/ja401926u
Meng, Gang ; Yanagida, Takeshi ; Nagashima, Kazuki ; Yoshida, Hideto ; Kanai, Masaki ; Klamchuen, Annop ; Zhuge, Fuwei ; He, Yong ; Rahong, Sakon ; Fang, Xiaodong ; Takeda, Seiji ; Kawai, Tomoji. / Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires. In: Journal of the American Chemical Society. 2013 ; Vol. 135, No. 18. pp. 7033-7038.
@article{7264e9a3484c4f639373532b86ee55a7,
title = "Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires",
abstract = "Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10-4 Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.",
author = "Gang Meng and Takeshi Yanagida and Kazuki Nagashima and Hideto Yoshida and Masaki Kanai and Annop Klamchuen and Fuwei Zhuge and Yong He and Sakon Rahong and Xiaodong Fang and Seiji Takeda and Tomoji Kawai",
year = "2013",
month = "5",
day = "8",
doi = "10.1021/ja401926u",
language = "English",
volume = "135",
pages = "7033--7038",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "18",

}

TY - JOUR

T1 - Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires

AU - Meng, Gang

AU - Yanagida, Takeshi

AU - Nagashima, Kazuki

AU - Yoshida, Hideto

AU - Kanai, Masaki

AU - Klamchuen, Annop

AU - Zhuge, Fuwei

AU - He, Yong

AU - Rahong, Sakon

AU - Fang, Xiaodong

AU - Takeda, Seiji

AU - Kawai, Tomoji

PY - 2013/5/8

Y1 - 2013/5/8

N2 - Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10-4 Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.

AB - Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10-4 Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.

UR - http://www.scopus.com/inward/record.url?scp=84877271781&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877271781&partnerID=8YFLogxK

U2 - 10.1021/ja401926u

DO - 10.1021/ja401926u

M3 - Article

VL - 135

SP - 7033

EP - 7038

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 18

ER -