Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires

Gang Meng, Takeshi Yanagida, Kazuki Nagashima, Hideto Yoshida, Masaki Kanai, Annop Klamchuen, Fuwei Zhuge, Yong He, Sakon Rahong, Xiaodong Fang, Seiji Takeda, Tomoji Kawai

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10-4 Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.

Original languageEnglish
Pages (from-to)7033-7038
Number of pages6
JournalJournal of the American Chemical Society
Volume135
Issue number18
DOIs
Publication statusPublished - May 8 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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