Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics

Sho Nagata, Gou Nakagawa, Tanemasa Asano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Metal-induced lateral crystallization (MILC) of amorphous Si using a nickel disilicide catalyst at temperatures up to 770 °C is investigated to produce high-quality polycrystalline Si films in a short period, while 670 °C is the maximum temperature allowed for processing using non alkaline glass substrates. Investigation of crystallization kinetics by isothermal annealing experiments provides activation energy values of 2.3 and 3.6 eV for MILC growth and spontaneous nucleation of amorphous Si, respectively. These values indicate that a MILC region of about 30 μm, which is large enough to place transistor circuits, can be grown by annealing for 15 min at 670 °C, which almost agrees with experimental results. N-channel thin-film transistors are fabricated on MILC films. An average carrier mobility of about 200 cm 2· V -1·s -1 is obtained from the MILC film crystallized at 670°C.

Original languageEnglish
Article number02BH04
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - Feb 1 2012

Fingerprint

Thin film transistors
transistors
Crystallization
Nickel
nickel
crystallization
thin films
Metals
metals
Isothermal annealing
Crystallization kinetics
transistor circuits
Carrier mobility
annealing
carrier mobility
Transistors
Nucleation
Activation energy
Annealing
Glass

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics. / Nagata, Sho; Nakagawa, Gou; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BH04, 01.02.2012.

Research output: Contribution to journalArticle

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