Abstract
Metal-induced lateral crystallization (MILC) of amorphous Si using a nickel disilicide catalyst at temperatures up to 770 °C is investigated to produce high-quality polycrystalline Si films in a short period, while 670 °C is the maximum temperature allowed for processing using non alkaline glass substrates. Investigation of crystallization kinetics by isothermal annealing experiments provides activation energy values of 2.3 and 3.6 eV for MILC growth and spontaneous nucleation of amorphous Si, respectively. These values indicate that a MILC region of about 30 μm, which is large enough to place transistor circuits, can be grown by annealing for 15 min at 670 °C, which almost agrees with experimental results. N-channel thin-film transistors are fabricated on MILC films. An average carrier mobility of about 200 cm 2· V -1·s -1 is obtained from the MILC film crystallized at 670°C.
| Original language | English |
|---|---|
| Article number | 02BH04 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 51 |
| Issue number | 2 PART 2 |
| DOIs | |
| Publication status | Published - Feb 1 2012 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics. / Nagata, Sho; Nakagawa, Gou; Asano, Tanemasa.
In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BH04, 01.02.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics
AU - Nagata, Sho
AU - Nakagawa, Gou
AU - Asano, Tanemasa
PY - 2012/2/1
Y1 - 2012/2/1
N2 - Metal-induced lateral crystallization (MILC) of amorphous Si using a nickel disilicide catalyst at temperatures up to 770 °C is investigated to produce high-quality polycrystalline Si films in a short period, while 670 °C is the maximum temperature allowed for processing using non alkaline glass substrates. Investigation of crystallization kinetics by isothermal annealing experiments provides activation energy values of 2.3 and 3.6 eV for MILC growth and spontaneous nucleation of amorphous Si, respectively. These values indicate that a MILC region of about 30 μm, which is large enough to place transistor circuits, can be grown by annealing for 15 min at 670 °C, which almost agrees with experimental results. N-channel thin-film transistors are fabricated on MILC films. An average carrier mobility of about 200 cm 2· V -1·s -1 is obtained from the MILC film crystallized at 670°C.
AB - Metal-induced lateral crystallization (MILC) of amorphous Si using a nickel disilicide catalyst at temperatures up to 770 °C is investigated to produce high-quality polycrystalline Si films in a short period, while 670 °C is the maximum temperature allowed for processing using non alkaline glass substrates. Investigation of crystallization kinetics by isothermal annealing experiments provides activation energy values of 2.3 and 3.6 eV for MILC growth and spontaneous nucleation of amorphous Si, respectively. These values indicate that a MILC region of about 30 μm, which is large enough to place transistor circuits, can be grown by annealing for 15 min at 670 °C, which almost agrees with experimental results. N-channel thin-film transistors are fabricated on MILC films. An average carrier mobility of about 200 cm 2· V -1·s -1 is obtained from the MILC film crystallized at 670°C.
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U2 - 10.1143/JJAP.51.02BH04
DO - 10.1143/JJAP.51.02BH04
M3 - Article
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 PART 2
M1 - 02BH04
ER -