Impact of semiconductor on diamond structure for power supply on chip applications

Kentaro Nakagawa, Takuya Kodama, Satoshi Matsumoto, Takatoshi Yamada, Masataka Hasegawa, Shinichi Nishizawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 μm).

Original languageEnglish
Article number04EP16
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - Apr 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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