Impact of semiconductor on diamond structure for power supply on chip applications

Kentaro Nakagawa, Takuya Kodama, Satoshi Matsumoto, Takatoshi Yamada, Masataka Hasegawa, Shinichi Nishizawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, we assessed a semiconductor (silicon or GaN)-on-diamond (SeOD) structure and compared it with a conventional silicon on insulator (SOI) structure, i.e., diamond, for power-supply-on-chip (power-SoC) applications by numerical simulations. The SeOD structure has thermal advantages over the conventional SOI structure without degrading electrical characteristics even using a thin diamond film (0.3 μm).

Original languageEnglish
Article number04EP16
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes

Fingerprint

power supplies
Diamonds
diamonds
chips
Semiconductor materials
Silicon
silicon
insulators
Diamond films
diamond films
Thin films
Computer simulation
simulation
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Impact of semiconductor on diamond structure for power supply on chip applications. / Nakagawa, Kentaro; Kodama, Takuya; Matsumoto, Satoshi; Yamada, Takatoshi; Hasegawa, Masataka; Nishizawa, Shinichi.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EP16, 01.01.2014.

Research output: Contribution to journalArticle

Nakagawa, Kentaro ; Kodama, Takuya ; Matsumoto, Satoshi ; Yamada, Takatoshi ; Hasegawa, Masataka ; Nishizawa, Shinichi. / Impact of semiconductor on diamond structure for power supply on chip applications. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 4 SPEC. ISSUE.
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