Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Kuniyuki Kakushima; Takuya Hoshii; Kazuo Tsutsui; Hiroshi Iwai; Shin Ichi Nishizawa; Ichiro Omura; Toshiro Hiramoto

doi:10.35848/1347-4065/ab7414

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin Ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

Renewable Energy Center

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.

Original language	English
Article number	SGGD18
Journal	Japanese journal of applied physics
Volume	59
Issue number	SG
DOIs	https://doi.org/10.35848/1347-4065/ab7414
Publication status	Published - Apr 1 2020

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs. / Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Kakushima, Kuniyuki; Hoshii, Takuya; Tsutsui, Kazuo; Iwai, Hiroshi; Nishizawa, Shin Ichi; Omura, Ichiro; Hiramoto, Toshiro.

In: Japanese journal of applied physics, Vol. 59, No. SG, SGGD18, 01.04.2020.

Research output: Contribution to journal › Article › peer-review

Saraya, Takuya ; Itou, Kazuo ; Takakura, Toshihiko ; Fukui, Munetoshi ; Suzuki, Shinichi ; Takeuchi, Kiyoshi ; Kakushima, Kuniyuki ; Hoshii, Takuya ; Tsutsui, Kazuo ; Iwai, Hiroshi ; Nishizawa, Shin Ichi ; Omura, Ichiro ; Hiramoto, Toshiro. / Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs. In: Japanese journal of applied physics. 2020 ; Vol. 59, No. SG.

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abstract = "In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.",

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AU - Suzuki, Shinichi

AU - Takeuchi, Kiyoshi

AU - Kakushima, Kuniyuki

AU - Hoshii, Takuya

AU - Tsutsui, Kazuo

AU - Iwai, Hiroshi

AU - Nishizawa, Shin Ichi

AU - Omura, Ichiro

AU - Hiramoto, Toshiro

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