TY - JOUR
T1 - Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs
AU - Saraya, Takuya
AU - Itou, Kazuo
AU - Takakura, Toshihiko
AU - Fukui, Munetoshi
AU - Suzuki, Shinichi
AU - Takeuchi, Kiyoshi
AU - Kakushima, Kuniyuki
AU - Hoshii, Takuya
AU - Tsutsui, Kazuo
AU - Iwai, Hiroshi
AU - Nishizawa, Shin Ichi
AU - Omura, Ichiro
AU - Hiramoto, Toshiro
PY - 2020/4/1
Y1 - 2020/4/1
N2 - In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.
AB - In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.
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U2 - 10.35848/1347-4065/ab7414
DO - 10.35848/1347-4065/ab7414
M3 - Article
AN - SCOPUS:85083310403
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SG
M1 - SGGD18
ER -