Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Kuniyuki Kakushima; Takuya Hoshii; Kazuo Tsutsui; Hiroshi Iwai; Shin Ichi Nishizawa; Ichiro Omura; Toshiro Hiramoto

doi:10.35848/1347-4065/ab7414

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin Ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

Renewable Energy Center

Research output: Contribution to journal › Article

Abstract

In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.

Original language	English
Article number	SGGD18
Journal	Japanese Journal of Applied Physics
Volume	59
Issue number	SG
DOIs	https://doi.org/10.35848/1347-4065/ab7414
Publication status	Published - Apr 1 2020

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.35848/1347-4065/ab7414

Fingerprint Dive into the research topics of 'Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs'. Together they form a unique fingerprint.

Cite this

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I., & Hiramoto, T. (2020). Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs. Japanese Journal of Applied Physics, 59(SG), [SGGD18]. https://doi.org/10.35848/1347-4065/ab7414

Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs. / Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Kakushima, Kuniyuki; Hoshii, Takuya; Tsutsui, Kazuo; Iwai, Hiroshi; Nishizawa, Shin Ichi; Omura, Ichiro; Hiramoto, Toshiro.

In: Japanese Journal of Applied Physics, Vol. 59, No. SG, SGGD18, 01.04.2020.

Research output: Contribution to journal › Article

Saraya, Takuya ; Itou, Kazuo ; Takakura, Toshihiko ; Fukui, Munetoshi ; Suzuki, Shinichi ; Takeuchi, Kiyoshi ; Kakushima, Kuniyuki ; Hoshii, Takuya ; Tsutsui, Kazuo ; Iwai, Hiroshi ; Nishizawa, Shin Ichi ; Omura, Ichiro ; Hiramoto, Toshiro. / Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs. In: Japanese Journal of Applied Physics. 2020 ; Vol. 59, No. SG.

@article{8429e4ecece4408cbc1ab957d66d3932,

title = "Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs",

abstract = "In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.",

author = "Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Nishizawa, {Shin Ichi} and Ichiro Omura and Toshiro Hiramoto",

year = "2020",

month = apr,

day = "1",

doi = "10.35848/1347-4065/ab7414",

language = "English",

volume = "59",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "SG",

}

TY - JOUR

T1 - Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

AU - Saraya, Takuya

AU - Itou, Kazuo

AU - Takakura, Toshihiko

AU - Fukui, Munetoshi

AU - Suzuki, Shinichi

AU - Takeuchi, Kiyoshi

AU - Kakushima, Kuniyuki

AU - Hoshii, Takuya

AU - Tsutsui, Kazuo

AU - Iwai, Hiroshi

AU - Nishizawa, Shin Ichi

AU - Omura, Ichiro

AU - Hiramoto, Toshiro

PY - 2020/4/1

Y1 - 2020/4/1

N2 - In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.

AB - In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85083310403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083310403&partnerID=8YFLogxK

U2 - 10.35848/1347-4065/ab7414

DO - 10.35848/1347-4065/ab7414

M3 - Article

AN - SCOPUS:85083310403

VL - 59

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - SG

M1 - SGGD18

ER -