Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

Research output: Contribution to journalArticle

Abstract

Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk and fully depleted silicon on insulator static random access memories at two angles of incidence: 0° (vertical) and 45° (tilted). The tilted incidence drifts the muon energy peak to a higher energy as expected. However, the SEU characteristics in the bulk device between the vertical and tilted incidences, including the voltage dependences of the SEU cross sections and multiple cells upset patterns, are similar despite the unexpected impact on the SEU cross section at an operating voltage of 0.4 V.

Original languageEnglish
Article number9007746
Pages (from-to)1566-1572
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume67
Issue number7
DOIs
Publication statusPublished - Jul 2020

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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