Abstract
TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.
| Original language | English |
|---|---|
| Title of host publication | 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 311-314 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781728105796 |
| DOIs | |
| Publication status | Published - May 2019 |
| Event | 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China Duration: May 19 2019 → May 23 2019 |
Publication series
| Name | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Volume | 2019-May |
| ISSN (Print) | 1063-6854 |
Conference
| Conference | 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 5/19/19 → 5/23/19 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. / Watanabe, Masahiro; Shigyo, Naoyuki; Hoshii, Takuya; Furukawa, Kazuyoshi; Kakushima, Kuniyuki; Satoh, Katsumi; Matsudai, Tomoko; Saraya, Takuya; Takakura, Toshihiro; Itou, Kazuo; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Muneta, Iriya; Wakabayashi, Hitoshi; Nakajima, Akira; Nishizawa, Shin Ichi; Tsutsui, Kazuo; Hiramoto, Toshiro; Ohashi, Hiromichi; Iwai, Hiroshi.
2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 311-314 8757640 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
AU - Watanabe, Masahiro
AU - Shigyo, Naoyuki
AU - Hoshii, Takuya
AU - Furukawa, Kazuyoshi
AU - Kakushima, Kuniyuki
AU - Satoh, Katsumi
AU - Matsudai, Tomoko
AU - Saraya, Takuya
AU - Takakura, Toshihiro
AU - Itou, Kazuo
AU - Fukui, Munetoshi
AU - Suzuki, Shinichi
AU - Takeuchi, Kiyoshi
AU - Muneta, Iriya
AU - Wakabayashi, Hitoshi
AU - Nakajima, Akira
AU - Nishizawa, Shin Ichi
AU - Tsutsui, Kazuo
AU - Hiramoto, Toshiro
AU - Ohashi, Hiromichi
AU - Iwai, Hiroshi
PY - 2019/5
Y1 - 2019/5
N2 - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.
AB - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.
UR - http://www.scopus.com/inward/record.url?scp=85073904369&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073904369&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2019.8757640
DO - 10.1109/ISPSD.2019.8757640
M3 - Conference contribution
AN - SCOPUS:85073904369
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 311
EP - 314
BT - 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PB - Institute of Electrical and Electronics Engineers Inc.
ER -