Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi OhashiHiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages311-314
Number of pages4
ISBN (Electronic)9781728105796
DOIs
Publication statusPublished - May 2019
Event31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China
Duration: May 19 2019May 23 2019

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854

Conference

Conference31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
CountryChina
CityShanghai
Period5/19/195/23/19

Fingerprint

Insulated gate bipolar transistors (IGBT)
Current voltage characteristics

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., ... Iwai, H. (2019). Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 (pp. 311-314). [8757640] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2019.8757640

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. / Watanabe, Masahiro; Shigyo, Naoyuki; Hoshii, Takuya; Furukawa, Kazuyoshi; Kakushima, Kuniyuki; Satoh, Katsumi; Matsudai, Tomoko; Saraya, Takuya; Takakura, Toshihiro; Itou, Kazuo; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Muneta, Iriya; Wakabayashi, Hitoshi; Nakajima, Akira; Nishizawa, Shin Ichi; Tsutsui, Kazuo; Hiramoto, Toshiro; Ohashi, Hiromichi; Iwai, Hiroshi.

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 311-314 8757640 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, M, Shigyo, N, Hoshii, T, Furukawa, K, Kakushima, K, Satoh, K, Matsudai, T, Saraya, T, Takakura, T, Itou, K, Fukui, M, Suzuki, S, Takeuchi, K, Muneta, I, Wakabayashi, H, Nakajima, A, Nishizawa, SI, Tsutsui, K, Hiramoto, T, Ohashi, H & Iwai, H 2019, Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019., 8757640, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 311-314, 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Shanghai, China, 5/19/19. https://doi.org/10.1109/ISPSD.2019.8757640
Watanabe M, Shigyo N, Hoshii T, Furukawa K, Kakushima K, Satoh K et al. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 311-314. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2019.8757640
Watanabe, Masahiro ; Shigyo, Naoyuki ; Hoshii, Takuya ; Furukawa, Kazuyoshi ; Kakushima, Kuniyuki ; Satoh, Katsumi ; Matsudai, Tomoko ; Saraya, Takuya ; Takakura, Toshihiro ; Itou, Kazuo ; Fukui, Munetoshi ; Suzuki, Shinichi ; Takeuchi, Kiyoshi ; Muneta, Iriya ; Wakabayashi, Hitoshi ; Nakajima, Akira ; Nishizawa, Shin Ichi ; Tsutsui, Kazuo ; Hiramoto, Toshiro ; Ohashi, Hiromichi ; Iwai, Hiroshi. / Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 311-314 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).
@inproceedings{1b53d821385344139db5c8856bd3178e,
title = "Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs",
abstract = "TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.",
author = "Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Nishizawa, {Shin Ichi} and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai",
year = "2019",
month = "5",
doi = "10.1109/ISPSD.2019.8757640",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "311--314",
booktitle = "2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019",
address = "United States",

}

TY - GEN

T1 - Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

AU - Watanabe, Masahiro

AU - Shigyo, Naoyuki

AU - Hoshii, Takuya

AU - Furukawa, Kazuyoshi

AU - Kakushima, Kuniyuki

AU - Satoh, Katsumi

AU - Matsudai, Tomoko

AU - Saraya, Takuya

AU - Takakura, Toshihiro

AU - Itou, Kazuo

AU - Fukui, Munetoshi

AU - Suzuki, Shinichi

AU - Takeuchi, Kiyoshi

AU - Muneta, Iriya

AU - Wakabayashi, Hitoshi

AU - Nakajima, Akira

AU - Nishizawa, Shin Ichi

AU - Tsutsui, Kazuo

AU - Hiramoto, Toshiro

AU - Ohashi, Hiromichi

AU - Iwai, Hiroshi

PY - 2019/5

Y1 - 2019/5

N2 - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

AB - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

UR - http://www.scopus.com/inward/record.url?scp=85073904369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073904369&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2019.8757640

DO - 10.1109/ISPSD.2019.8757640

M3 - Conference contribution

AN - SCOPUS:85073904369

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 311

EP - 314

BT - 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -