Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi OhashiHiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages311-314
Number of pages4
ISBN (Electronic)9781728105796
DOIs
Publication statusPublished - May 2019
Event31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China
Duration: May 19 2019May 23 2019

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854

Conference

Conference31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Country/TerritoryChina
CityShanghai
Period5/19/195/23/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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