TY - GEN
T1 - Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
AU - Watanabe, Masahiro
AU - Shigyo, Naoyuki
AU - Hoshii, Takuya
AU - Furukawa, Kazuyoshi
AU - Kakushima, Kuniyuki
AU - Satoh, Katsumi
AU - Matsudai, Tomoko
AU - Saraya, Takuya
AU - Takakura, Toshihiro
AU - Itou, Kazuo
AU - Fukui, Munetoshi
AU - Suzuki, Shinichi
AU - Takeuchi, Kiyoshi
AU - Muneta, Iriya
AU - Wakabayashi, Hitoshi
AU - Nakajima, Akira
AU - Nishizawa, Shin Ichi
AU - Tsutsui, Kazuo
AU - Hiramoto, Toshiro
AU - Ohashi, Hiromichi
AU - Iwai, Hiroshi
N1 - Funding Information:
This work is based on results obtained from a project commissioned by New Energy and Industrial Technology Development Organization (NEDO).
PY - 2019/5
Y1 - 2019/5
N2 - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.
AB - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.
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U2 - 10.1109/ISPSD.2019.8757640
DO - 10.1109/ISPSD.2019.8757640
M3 - Conference contribution
AN - SCOPUS:85073904369
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 311
EP - 314
BT - 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Y2 - 19 May 2019 through 23 May 2019
ER -