Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Masahiro Watanabe; Naoyuki Shigyo; Takuya Hoshii; Kazuyoshi Furukawa; Kuniyuki Kakushima; Katsumi Satoh; Tomoko Matsudai; Takuya Saraya; Toshihiro Takakura; Kazuo Itou; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Iriya Muneta; Hitoshi Wakabayashi; Akira Nakajima; Shin Ichi Nishizawa; Kazuo Tsutsui; Toshiro Hiramoto; Hiromichi Ohashi; Hiroshi Iwai

doi:10.1109/ISPSD.2019.8757640

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi OhashiHiroshi Iwai

Renewable Energy Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm² region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (J_Csat) using a 2D simulation is also presented with an appropriate correction.

Original language	English
Title of host publication	2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	311-314
Number of pages	4
ISBN (Electronic)	9781728105796
DOIs	https://doi.org/10.1109/ISPSD.2019.8757640
Publication status	Published - May 2019
Event	31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, China Duration: May 19 2019 → May 23 2019

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2019-May
ISSN (Print)	1063-6854

Conference

Conference	31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Country	China
City	Shanghai
Period	5/19/19 → 5/23/19

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2019.8757640

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Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S. I., Tsutsui, K., Hiramoto, T., ... Iwai, H. (2019). Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 (pp. 311-314). [8757640] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2019.8757640

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. / Watanabe, Masahiro; Shigyo, Naoyuki; Hoshii, Takuya; Furukawa, Kazuyoshi; Kakushima, Kuniyuki; Satoh, Katsumi; Matsudai, Tomoko; Saraya, Takuya; Takakura, Toshihiro; Itou, Kazuo; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Muneta, Iriya; Wakabayashi, Hitoshi; Nakajima, Akira; Nishizawa, Shin Ichi; Tsutsui, Kazuo; Hiramoto, Toshiro; Ohashi, Hiromichi; Iwai, Hiroshi.

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 311-314 8757640 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, M, Shigyo, N, Hoshii, T, Furukawa, K, Kakushima, K, Satoh, K, Matsudai, T, Saraya, T, Takakura, T, Itou, K, Fukui, M, Suzuki, S, Takeuchi, K, Muneta, I, Wakabayashi, H, Nakajima, A, Nishizawa, SI, Tsutsui, K, Hiramoto, T, Ohashi, H & Iwai, H 2019, Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019., 8757640, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc., pp. 311-314, 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Shanghai, China, 5/19/19. https://doi.org/10.1109/ISPSD.2019.8757640

Watanabe M, Shigyo N, Hoshii T, Furukawa K, Kakushima K, Satoh K et al. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 311-314. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2019.8757640

Watanabe, Masahiro ; Shigyo, Naoyuki ; Hoshii, Takuya ; Furukawa, Kazuyoshi ; Kakushima, Kuniyuki ; Satoh, Katsumi ; Matsudai, Tomoko ; Saraya, Takuya ; Takakura, Toshihiro ; Itou, Kazuo ; Fukui, Munetoshi ; Suzuki, Shinichi ; Takeuchi, Kiyoshi ; Muneta, Iriya ; Wakabayashi, Hitoshi ; Nakajima, Akira ; Nishizawa, Shin Ichi ; Tsutsui, Kazuo ; Hiramoto, Toshiro ; Ohashi, Hiromichi ; Iwai, Hiroshi. / Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs. 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 311-314 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs",

abstract = "TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.",

author = "Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Nishizawa, {Shin Ichi} and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai",

note = "Funding Information: This work is based on results obtained from a project commissioned by New Energy and Industrial Technology Development Organization (NEDO).; 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

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doi = "10.1109/ISPSD.2019.8757640",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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AU - Watanabe, Masahiro

AU - Shigyo, Naoyuki

AU - Hoshii, Takuya

AU - Furukawa, Kazuyoshi

AU - Kakushima, Kuniyuki

AU - Satoh, Katsumi

AU - Matsudai, Tomoko

AU - Saraya, Takuya

AU - Takakura, Toshihiro

AU - Itou, Kazuo

AU - Fukui, Munetoshi

AU - Suzuki, Shinichi

AU - Takeuchi, Kiyoshi

AU - Muneta, Iriya

AU - Wakabayashi, Hitoshi

AU - Nakajima, Akira

AU - Nishizawa, Shin Ichi

AU - Tsutsui, Kazuo

AU - Hiramoto, Toshiro

AU - Ohashi, Hiromichi

AU - Iwai, Hiroshi

N1 - Funding Information: This work is based on results obtained from a project commissioned by New Energy and Industrial Technology Development Organization (NEDO).

PY - 2019/5

Y1 - 2019/5

N2 - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

AB - TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

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