TY - JOUR
T1 - Impact properties of low activation vanadium alloy after low-temperature neutron irradiation at 450°C and below
AU - Nagasaka, Takuya
AU - Muroga, Takeo
AU - Miyazawa, Takeshi
AU - Watanabe, Hideo
AU - Yamazaki, Masanori
N1 - Funding Information:
This work was supported by collaboration program of International Research Center for Nuclear Materials Science, Institute for Materials Research (IMR), Tohoku University, and NIFS budget code NIFS09-UCFF003 and NIFS10-UFFF004.
Publisher Copyright:
© 2011, Taylor and Francis Inc. All rights reserved.
PY - 2011
Y1 - 2011
N2 - A reference low-activation vanadium alloy NIFS-HEAT-2 was neutron-irradiated at 450° C and below, in order to estimate the resistance to low temperature irradiation. DBTT of NIFS-HEAT-2 was-85°C after irradiation up to 8.5 dpa at 450° C in Na atmosphere, while DBTT was below-196°C for 3.7 dpa at 430°C in Li atmosphere. On the other hand, DBTT was lower than about-90° C for the irradiation up to 0.1~1 dpa at 60, 290 and 400° C. The DBTT shift was increased with increasing hardness after neutron irradiation for limited irradiation conditions. The mechanisms of DBTT shift and irradiation hardening at low temperature was discussed.
AB - A reference low-activation vanadium alloy NIFS-HEAT-2 was neutron-irradiated at 450° C and below, in order to estimate the resistance to low temperature irradiation. DBTT of NIFS-HEAT-2 was-85°C after irradiation up to 8.5 dpa at 450° C in Na atmosphere, while DBTT was below-196°C for 3.7 dpa at 430°C in Li atmosphere. On the other hand, DBTT was lower than about-90° C for the irradiation up to 0.1~1 dpa at 60, 290 and 400° C. The DBTT shift was increased with increasing hardness after neutron irradiation for limited irradiation conditions. The mechanisms of DBTT shift and irradiation hardening at low temperature was discussed.
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U2 - 10.13182/FST11-A12384
DO - 10.13182/FST11-A12384
M3 - Article
AN - SCOPUS:84886397885
SN - 1536-1055
VL - 60
SP - 379
EP - 383
JO - Fusion Science and Technology
JF - Fusion Science and Technology
IS - 1
ER -