Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays

Yi He, Reiji Hattori, Jerzy Kanicki

Research output: Contribution to journalArticlepeer-review

100 Citations (Scopus)

Abstract

Two improved four thin-film-transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed. Both circuits can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The circuit simulation results indicate that an excellent linearity between the output current and input current can be established. An output current level higher than ∼ 5 μA can be achieved with these circuits. This current level can provide a pixel electrode brightness higher than 1,000 cd/m 2 with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel electrode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

Original languageEnglish
Pages (from-to)1322-1325
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume48
Issue number7
DOIs
Publication statusPublished - Jul 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays'. Together they form a unique fingerprint.

Cite this